Dynamic Characteristics of 1.55/spl Mu/m Gain-Coupled Distributed Feedback Laser

Nakajima, S.,Inoue, T.,Luo, Y.,Oki, T.

DOI: https://doi.org/10.1109/islc.1992.763552

1992-01-01

Abstract:A low wavelength chirp of 0.2 nm at -20 dB under 2.4 GHz modulation and a Av-At product of 0.55 which corresponds to an effective /spl alpha/ parameter as small as 0.76 under the gain switching operation were achieved.

What problem does this paper attempt to address?

Beam Wavefront Dynamical Compensation by Aberrations of the Gain Medium in Laser Amplifiers for Beam Quality Improvement.

Chong Liu,Yi Wang,Zhibin Ye,Zhigang Zhao,Zhen Xiang

DOI: https://doi.org/10.1364/ol.39.002537

IF: 3.6

2014-01-01

Optics Letters

Abstract:A method is presented to dynamically improve the beam quality in laser amplifiers by spherical aberration compensation. By imaging the field with a negative spherical aberration into a laser amplifier, the wavefront aberration of an input beam could be compensated by that of the gain medium in the amplifier with positive spherical aberration. Both power amplification and beam quality improvement can be achieved simultaneously. No additional optical components are introduced. Experiments are conducted for a beam from an oscillator with 28 W output power. The M2 factor of the beam was improved from 4.2 to 1.6 after amplification. The power was also amplified to 54.7 W. It is a cost-effective and passive way for wavefront compensation, as compared to deformable mirrors and phase corrector plates.
Direct Modulation of Deep-Submicron Slotted Single Mode FP Laser

Danfeng Fan,Lei Wang,Tingting Yu,Li Zou,Jian-Jun He

DOI: https://doi.org/10.1364/acpc.2012.as4h.2

2012-01-01

Abstract:By utilizing chirp managed laser (CML) technology to improve the direct modulation performance of deep-submicron slotted single mode FP laser, a dispersion penalty of only 0.4 dB after 100 km SSMF is achieved. The back-to-back penalty is only 1.8 dB compared to a zero chirp LiNbO3 MZ transmitter.
Nonlinearity Optimization of Dissipative-Soliton Fiber Laser for Generation of Pulses with 350 Kw Peak Power

Han Chi,Bowen Liu,Youjian Song,Minglie Hu,Lu Chai,Weidong Shen,Xu Liu,Chingyue Wang

DOI: https://doi.org/10.1017/hpl.2018.18

IF: 4.8

2018-01-01

High Power Laser Science and Engineering

Abstract:We demonstrate a nonlinearity optimization method by altering distribution of passive fibers in a dissipative-soliton mode-locked fiber laser to level up output parameters. In the numerical simulation, we found that the passive fiber segment after gain fiber characterizes the highest average B-integral among fiber segments. By reducing the length of this fiber section and keeping the total passive fiber length as constant, the output pulse energy can be effectively scaled up while maintaining a short dechirped pulse duration, resulting in boosting peak power. With this method, 37-nJ pulses are generated from a dissipative-soliton mode-locked cladding pumped ytterbium-doped single-mode fiber laser in the experiment. The pulse can be dechirped to 66 fs with 350 kW peak power. Moreover, the pulse pedestal is suppressed by a vector-dispersion compressor.
High-Performance Gain-Coupled Distributed-Feedback Semiconductor-Lasers with Absorptive Gratings

Y LUO,HL CAO,M DOBASHI,H HOSOMATSU,Y NAKANO,K TADA

DOI: https://doi.org/10.1117/12.144138

1993-01-01

Abstract:Improved characteristics of gain-coupled distributed feedback (DFB) semiconductor lasers are obtained by optimizing the duty cycle of the absorptive grating and using an absorptive conduction-type-inverted grating. Low threshold current cw operation is achieved at 10 mA lower than lasers without conduction-type-inverting. Furthermore, improved linear oscillation and a narrow linewidth are demonstrated. For gain-coupled DFB semiconductor lasers based on absorptive gratings, ultralow chirping operation under gain switching conditions is obtained for the first time.
Short-pulse single-mode operation of gain-coupled distributed-feedback semiconductor lasers

Yi Luo,Ryo Takahashi,Yoshiaki Nakano,Kunio Tada,Takeshi Kamiya,H. Hosomatsu,Hideto Iwaoka

1991-01-01

Abstract:Single-mode short optical pulse sources with very low chirping are of necessity in applications such as ultrahigh-speed optical-soliton communications and electro-optical measurements. The gain-coupled distributed feedback (GC-DFB) semiconductor laser which we have developed recently1 could be a candidate because of its dynamic optical cavity.7 Here, we report very low-chirp, single-mode oscillation of the GC-DFB laser operated under short-pulse generation conditions.
Novel high-speed low-chirp q-modulated semiconductor distributed feedback laser

Jianjun He

2006-01-01

Abstract:A novel Q-modulated semiconductor distributed feedback (DFB) laser is proposed and analyzed. The laser consists of a gain section with a distributed feedback grating, a phase section, and a Q-modulator at the back end. The Q-modulator is placed in an anti-resonant Fabry-Perot cavity acting as a rear reflector of the laser. Its reflectivity can be changed by varying the waveguide absorption of the modulator. The change of the reflectivity of the rear reflector results in a change in the Q-factor, the lasing threshold and consequently the output power of the laser. The monolithically integrated Q-modulated DFB laser has advantages of high speed, high extinction ratio and low wavelength chirp.
1.55-/Spl Mu/m AlGaInAs-InP Laterally Coupled Distributed Feedback Laser

J Wang,JB Tian,PF Cai,B Xiong,CZ Sun,Y Luo

DOI: https://doi.org/10.1109/lpt.2005.848398

IF: 2.6

2005-01-01

IEEE Photonics Technology Letters

Abstract:A novel 1.55-/spl mu/m AlGaInAs-InP laterally coupled (LC) distributed feedback (DFB) semiconductor laser is presented. Longitudinal feedback and lateral optical confinement are realized simultaneously by incorporating deep gratings etched with inductively coupled plasma technique. Stable single-mode operation with a sidemode suppression ratio over 45 dB has been demonstrated for the fabricated LC-DFB laser.
Study of Gain-Coupled Distributed Feedback Laser Based on High Order Surface Gain-Coupled Gratings

Feng Gao,Li Qin,Yongyi Chen,Peng Jia,Chao Chen,LiWen Cheng,Hong Chen,Lei Liang,Yugang Zeng,Xing Zhang,Hao Wu,Yongqiang Ning,Lijun Wang

DOI: https://doi.org/10.1016/j.optcom.2017.09.023

IF: 2.4

2017-01-01

Optics Communications

Abstract:Single-longitudinal-mode, gain-coupled distributed feedback (DFB) lasers based on high order surface gain-coupled gratings are achieved. Periodic surface metal p-contacts with insulated grooves realize gain-coupled mechanism. To enhance gain contrast in the quantum wells without the introduction of effective index-coupled effect, groove length and depth were well designed. Our devices provided a single longitudinal mode with the maximum CW output power up to 48.8 mW/facet at 971.31 nm at 250 mA without facet coating, 3dB linewidth (<3.2 pm) and SMSR (>39 dB). Optical bistable characteristic was observed with a threshold current difference. Experimentally, devices with different cavity lengths were contrasted on power–current and spectrum characteristics. Due to easy fabrication technique and stable performance, it provides a method of fabricating practical gain-coupled distributed feedback lasers for commercial applications.
10Gb/s Direct Modulation of Widely Tunable V-Cavity-Laser with Chirp Managed Laser Technology

Jianjun Meng,Lei Wang,Jian-Jun He

DOI: https://doi.org/10.1117/12.2078176

2015-01-01

Abstract:We report direct modulation results in a simple and compact widely tunable V-cavity laser. Chirp managed laser technology has been successfully applied to the V-cavity laser with an optical spectrum reshaping filter. The tunable V-cavity-laser employs a half-wave coupler to obtain single-mode operation with high side-mode suppression ratio and the Vernier effect to extend its tuning range. It does not require any grating structure and regrowth steps. In this experiment, we achieved single-electrode controlled wavelength tuning of about 18 channels at 100GHz spacing with a fixed temperature, and 32 channels using 2 temperature settings. Well-open eye diagrams with extinction ratio above 4.3dB in all channels are observed when the laser is directly modulated at 2.5Gb/s. Although the measured small-signal frequency response is only about 5.7GHz, more than 6.7dB extinction ratio under 10Gb/s modulation rate is achieved by using the chirp managed laser technology with an optical spectrum reshaping filter placed after the output of the laser to convert the frequency chirp accompanying the direct modulation to amplitude modulation. The advantages of compactness, fabrication simplicity, easy wavelength control algorithm, and simple direct modulation offer great potential for the chirped managed V-cavity laser to be used in low-cost WDM links.
1.5 μm in GaAsP/InP strained MQW gain-coupled DFB laser with an improved periodically modulated injection-carrier grating

Yi Luo,Guopeng Wen,YuNong Gan,Keqian Zhang,Tsurugi K. Sudoh,Shinya Sudo,Yoshiaki Nakano,Kunio Tada

1999-01-01

Journal of the Korean Physical Society

Abstract:A 1.55 mu m InGaAsP/InP strained multiple quantum well (MQW) distributed feedback (DFB) laser with an improved periodically modulated injection-carrier grating is reported for the first time. In this laser structure, the effect of current blocking grating is enhanced by optimizing the doping level of its surrounding layers, therefore, large gain coupling coefficient can be expected. The device is fabricated by hybrid growth of MOVPE and LPE. A single-mode oscillation yield as high as 80 % is achieved under the condition of two cleaved facets.
Static and Dynamic Characteristics of Digital Wavelength Switching in V-Coupled-Cavity Semiconductor Laser

Dekun Liu,Min Lou,Jian-Jun He

DOI: https://doi.org/10.1109/jlt.2009.2036942

IF: 4.7

2009-01-01

Journal of Lightwave Technology

Abstract:The static and dynamic characteristics of digital wavelength switching in a novel V-coupled-cavity semiconductor laser is investigated. In contrast to previously investigated Y-laser, the V-shaped coupler can realize not only an optimum coupling coefficient but also a ¿-phase difference between the cross-coupling and self-coupling coefficients, which results in a high single-mode selectivity. It is shown that while switching to an optimal current value results in the maximal output power and maximal side-mode suppression ratio (SMSR), the digitally wavelength switchable laser has a good tolerance on the accuracy of the switching current. For a current deviation corresponding to ±25% of the channel spacing, the SMSR only degrades by about 5.2 dB, while the wavelength varies by only ±0.01 nm from the set value for the case of 0.8 nm channel spacing. The dynamic properties including the switching transients and switching delay are also investigated and discussed.
Laser-Diodes with Gain-Coupled Distributed Optical Feedback

Y NAKANO,Y LUO,K TADA

DOI: https://doi.org/10.1117/12.43816

1991-01-01

Abstract:A new class of distributed feedback (DFB) semiconductor lasers is reviewed, which incorporates a periodic variation in gain coefficient. Intrinsic single mode nature and reflection immunity are great advantages of the gain-coupled (GC) DFB laser. Moreover, its carrier- density-dependent dynamic resonator provides a capability of generating short optical pulses with very low chirping. Recent experimental results of research on the GC DFB laser are presented.
Gain-coupled 770 Nm DFB Semiconductor Laser Based on Surface Grating

Chunkao Ruan,Yongyi Chen,Feng Gao,Li Qin,Dezheng Ma,Peng Jia,Chao Chen,Hao Wu,Xia Liu,Yugang Zeng,Xing Zhang,Yue Song,Yongqiang Ning,Lijun Wang

DOI: https://doi.org/10.1016/j.optcom.2020.126377

IF: 2.4

2021-01-01

Optics Communications

Abstract:Single-longitudinal-mode gain-coupled distributed feedback (DFB) lasers based on high-order gain-coupled surface gratings emitting at 770 nm window are implemented. The periodic surface metal p-contact with insulated grating grooves realizes a gain coupled mechanism. Our devices provided a single longitudinal mode with the maximum CW output power up to 116.8 mW@400 mA with facet coated (HR 99%, AR<0.5%), 3 dB linewidth is 0.26 pm and SMSR is 36 dB. Due to easy-to-manufacture technology and stable performance, it provides a practical gain-coupled distributed feedback laser emitting at 770 nm region manufacturing method for commercial applications.
Modal Gain Characteristics of a 2 Μm InGaSb/AlGaAsSb Passively Mode-Locked Quantum Well Laser

Xiang Li,Hong Wang,Zhongliang Qiao,Xin Guo,Geok Ing Ng,Yu Zhang,Zhichuan Niu,Cunzhu Tong,Chongyang Liu

DOI: https://doi.org/10.1063/1.5010015

IF: 4

2017-01-01

Applied Physics Letters

Abstract:Passive mode locking with a fundamental repetition rate at ∼18.46 GHz is demonstrated in a two-section InGaSb/AlGaAsSb quantum well laser emitting at 2 μm. Modal gain characteristics of the laser are investigated by performing the Hakki-Paoli method to gain better insight into the impact of the absorber bias voltage (Va) on the light output. The lasing action moves to longer wavelengths markedly with increasing negative Va. The light output contains more longitudinal modes in the mode locking regime if the gain bandwidth is larger at a certain Va. Our findings provide guidelines for output characteristics of the mode-locked laser.
Travelling wave analysis on high-speed performance of Q-modulated distributed feedback laser.

Jiankun Zhi,Hongli Zhu,Dekun Liu,Lei Wang,Jian-Jun He

DOI: https://doi.org/10.1364/OE.20.002277

IF: 3.8

2012-01-01

Optics Express

Abstract:The structure of a Q-modulated distributed feedback laser is designed and simulated. A large reflectivity modulation of the rear reflector is achieved by using an anti-resonant cavity formed by two deep trenches with the one between the modulator and phase section filled by a high index dielectric material. The travelling wave model is presented to analyze the high speed performance of the laser. Due to the effect of the wave propagation in the structure, the modulation extinction ratio decreases with increasing cavity length. It is shown that 40 Gb/s RZ signal modulation can be achieved with an extinction ratio of 7 dB and 10 dB, respectively, for a cavity length of 500 μm and 300 μm.
1.3 Μm Laterally Coupled Distributed Feedback Laser with High Side Mode Suppression Ratio and Bandwidth

Q. C. Wang,J. Wang,C. Z. Sun,B. Xiong,Y. Luo,Z. B. Hao,Y. J. Han,L. Wang,H. T. Li,J. D. Yu

2019-01-01

Abstract:A 1.3 μm laterally coupled distributed feedback laser was realized with deep lateral gratings. High side mode suppression ratio (SMSR) of 50.24 dB and 3 dB bandwidth of about 10 GHz were demonstrated.
Evaluation Of Tunable Microwave Signals Generated By Monolithic Two-Section Distributed Feedback Lasers

Chien-Chung Lin,Chen-Yu Chien,Yu-Chang Wu,Hao-Chung Kuo,Chun-Ting Lin

DOI: https://doi.org/10.1364/cleo_qels.2013.jth2a.104

2013-01-01

Abstract:We demonstrated a two-section 1.55 mu m laser with an air gap in the middle section. When two DFB lasers are powered together, an optical heterodying operation can produce microwave signals up to 44 GHz.
Gain-Coupled Dfb Semiconductor-Lasers

K TADA,Y NAKANO,Y LUO

DOI: https://doi.org/10.1117/12.144137

1993-01-01

Abstract:In conventional DFB semiconductor lasers, the distributed feedback of optical wave is provided by the periodic perturbation of waveguide index along the laser axis. This index- coupled DFB laser has a troublesome problem of producing a pair of longitudinal modes having equal threshold gain. Kogelnik and Shank predicted that this threshold degeneracy could be removed if the optical feedback was provided by the periodic perturbation of gain coefficient. The attempt to apply the gain coupling mechanism to DFB semiconductor lasers was started in 1988 by the present authors. In these four years it has been elucidated that the gain-coupled DFB semiconductor lasers have many advantages such as excellent single mode nature, reflection insensitivity, and low-chirping short optical pulse generation capability. In this talk various kinds of the gain-coupled DFB lasers developed so far and their main features are introduced and reviewed.
Analysis of Distributed Feedback Semiconductor Laser-Electroabsorption Modulator Integrated Light Source, Including Gain-Coupled Structure

WM SI,Y LUO,DJ LI,KQ ZHANG,Y NAKANO,K TADA

DOI: https://doi.org/10.1143/jjap.34.1260

IF: 1.5

1995-01-01

Japanese Journal of Applied Physics

Abstract:Taking into consideration of gain coupling, characteristics such as single-mode selectivity, chirping and light output efficiency of photonic integrated circuits (PIC) integrating distributed feedback (DFB) semiconductor lasers and electroabsorption modulators are analyzed for the first time. Devices with conventional index-coupled (IC), quarter-wave-shifted (QWS) and gain-coupled (GC) DFB laser sections are calculated and compared. The chirping of GC-PIC is nearly the same as that of IC-PIC and QWS-PIC, but the single-mode selectivity of GC-PIC is much better. With a [HR-AR] coating , which is advantageous for high-power operation, GC-PIC shows a much higher probability of single-mode operation than IC-PIC, while QWS-PIC does not function at all.
2.5Gb/s 1.55 μm InGaAsP/InP DFB laser/electroabsorption modulator integrated device

Yi Luo,Changzheng Sun,Guopeng Wen,Tongming Li,Xinmin Yang,Yousheng Wu,Renfan Wang,CaiLing Wang,Tao Huang,Jinyan Jin

1999-01-01

Abstract:Based on fabricating a 1.55 μm InGaAsP/InP partially-gain-coupled DFB laser/electroabsorption modulator monolithic integrated device using a very simple device structure, we improved the performance of the device and constructed a standard 14-pin butterfly packaged transmitter module. The threshold current of the module is around 20-30 mA, with over 40 dB side mode suppress ratio. The coupled output optical power is 2 mW, and the extinction ratio under 3V reverse bias is greater than 17 dB. 2.5 Gb/s transmission over 240 km of standard fiber is demonstrated, power penalty less than 0.5dB is obtained at BER=10-10.

Dynamic Characteristics of 1.55/spl Mu/m Gain-Coupled Distributed Feedback Laser

Beam Wavefront Dynamical Compensation by Aberrations of the Gain Medium in Laser Amplifiers for Beam Quality Improvement.

Direct Modulation of Deep-Submicron Slotted Single Mode FP Laser

Nonlinearity Optimization of Dissipative-Soliton Fiber Laser for Generation of Pulses with 350 Kw Peak Power

High-Performance Gain-Coupled Distributed-Feedback Semiconductor-Lasers with Absorptive Gratings

Short-pulse single-mode operation of gain-coupled distributed-feedback semiconductor lasers

Novel high-speed low-chirp q-modulated semiconductor distributed feedback laser

1.55-/Spl Mu/m AlGaInAs-InP Laterally Coupled Distributed Feedback Laser

Study of Gain-Coupled Distributed Feedback Laser Based on High Order Surface Gain-Coupled Gratings

10Gb/s Direct Modulation of Widely Tunable V-Cavity-Laser with Chirp Managed Laser Technology

1.5 μm in GaAsP/InP strained MQW gain-coupled DFB laser with an improved periodically modulated injection-carrier grating

Static and Dynamic Characteristics of Digital Wavelength Switching in V-Coupled-Cavity Semiconductor Laser

Laser-Diodes with Gain-Coupled Distributed Optical Feedback

Gain-coupled 770 Nm DFB Semiconductor Laser Based on Surface Grating

Modal Gain Characteristics of a 2 Μm InGaSb/AlGaAsSb Passively Mode-Locked Quantum Well Laser

Travelling wave analysis on high-speed performance of Q-modulated distributed feedback laser.

1.3 Μm Laterally Coupled Distributed Feedback Laser with High Side Mode Suppression Ratio and Bandwidth

Evaluation Of Tunable Microwave Signals Generated By Monolithic Two-Section Distributed Feedback Lasers

Gain-Coupled Dfb Semiconductor-Lasers

Analysis of Distributed Feedback Semiconductor Laser-Electroabsorption Modulator Integrated Light Source, Including Gain-Coupled Structure

2.5Gb/s 1.55 μm InGaAsP/InP DFB laser/electroabsorption modulator integrated device