Abstract:This paper presents a MEMS electrochemical angular accelerometer with a silicon-based four-electrode structure, which was made of thousands of interconnected microchannels for electrolyte flow, anodes uniformly coated on structure surfaces and cathodes located on the sidewalls of flow holes. From the perspective of device fabrication, in this study, the previously reported multi-piece assembly was simplified into single-piece integrative manufacturing, effectively addressing the problems of complex assembly and manual alignment. From the perspective of the sensitive structure, in this study, the silicon-based four-electrode structure featuring with complete insulation layers between anodes and cathodes can enable fast electrochemical reactions with improved sensitivities. Numerical simulations were conducted to optimize the geometrical parameters of the silicon-based four-electrode structure, where increases in fluid resistance and cathode area were found to expand working bandwidths and improve device sensitivity, respectively. Then, the silicon-based four-electrode structure was fabricated by conventional MEMS processes, mainly composed of wafer-level bonding and wafer-level etching. As to device characterization, the MEMS electrochemical angular accelerometer with the silicon-based four-electrode structure exhibited a maximum sensitivity of 1458 V/(rad/s2) at 0.01 Hz and a minimum noise level of -164 dB at 1 Hz. Compared with previously reported electrochemical angular accelerometers, the angular accelerometer developed in this study offered higher sensitivities and lower noise levels, indicating strong potential for applications in the field of rotational seismology.

A single-crystal silicon 3-axis CMOS-MEMS accelerometer

Monolithic Integrated Cavity Optomechanical Accelerometer Based on Push-Pull Photonic Crystal Zipper Cavity

Design and fabrication of an integrated CMOS-MEMS 3-axis accelerometer

Monolithic Integrated Micro-Opto-Electromechanical Accelerometer Based on Michelson Interferometer Structure

Microfabrication and Characterization of an Integrated 3-Axis CMOS-MEMS Accelerometer

A Monolithic Cmos-Mems 3-Axis Accelerometer with A Low-Noise, Low-Power Dual-Chopper Amplifier

Mechanical Design Optimization of A Single-Axis Moems Accelerometer Based on A Grating Interferometry Cavity for Ultrahigh Sensitivity

A Three-Axis CMOS-MEMS Accelerometer Structure With Vertically Integrated Fully Differential Sensing Electrodes

A CMOS-MEMS accelerometer with tri-axis sensing electrodes arrays

Process Development for CMOS-MEMS Sensors with Robust Electrically Isolated Bulk Silicon Microstructures

An integrated fully-differential CMOS-MEMS z-axis accelerometer utilizing a torsional suspension

The Cmos-Mems 3-Axis Capacitive Accelerometer To Meet The Commercial Specifications

Implementation of A Monolithic Single Proof-Mass Tri-Axis Accelerometer Using Cmos-Mems Technique

Design And Fabrication Of A Slanted-Beam Mems Accelerometer

Design And Implementation Of A Novel Cmos-Mems Single Proof-Mass Tri-Axis Accelerometer

High Resolution Single Crystal Silicon Accelerometer Using Silicon Fusion Bonding and Deep Reactive Ion Etching

A MEMS Electrochemical Angular Accelerometer with Silicon-Based Four-Electrode Structure

A MEMS Electrochemical Angular Accelerometer Leveraging Silicon-Based Three-Electrode Structure

Integrated monolithic tri-axial micromachined accelerometer

A Sub-µg Bias-Instability MEMS Oscillating Accelerometer with an Ultra-Low-Noise Read-Out Circuit in CMOS

Design and Fabrication of a Micro-Electromechanical System Sandwich Capacitive Accelerometer