Abstract:A novel planar gate SiC MOSFET embedding low barrier diode (LBD-MOSFET) with improved third quadrant and switching performance is proposed and characterized in this letter. The LBD-MOSFET not only exhibits about 3 times lower diode turn on voltage than the body diode, but also successfully eliminates bipolar degradation phenomena. A low potential barrier for electrons transporting from JFET region to N<sup>+</sup> source region is formed in LBD-MOSFET owing to the existence of the depletion charge in LBD base region. Meanwhile, the gate-to-drain charge ( ${Q}_{text {gd}}){}$ and gate-to-drain capacitance ( ${C}_{text {gd}}){}$ of LBD-MOSFET are significantly reduced by about $21times $ and $15times $ in comparison with the conventional MOSFET (C-MOSFET), due to the reduction of the overlapping area of the gate and drift region. Therefore, the obtained high frequency figures of merit (HF-FOM $1= {R}_{text {on,sp}}times {Q}_{text {gd}}$ and HF-FOM $2= {R}_{text {on,sp}}times {C}_{text {gd}}$ ) for the LBD-MOSFET are improved by about 13 times and 9 times compared with C-MOSFET. Furthermore, a compact potential barrier analytical model based on Poisson's Law is developed to understand the origin of low potential barrier diode in SiC LBD-MOSFET. The overall enhanced performances suggest SiC LBD-MOSFET is an excellent choice for high frequency power electronic applications.

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Simulation Study of a Power MOSFET with Built-in Channel Diode for Enhanced Reverse Recovery Performance

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