Abstract:Ge‐based devices are promising next‐generation technologies for extending Moore's law. However, Fermi‐level pinning (FLP) at the metal/n‐Ge interface results in large contact resistance. Here, a wafer‐scale conductive carbon nanotube insertion method is developed to alleviate FLP, leading to ohmic contact and the smallest contact resistance between a metal and a lightly doped n‐Ge. Germanium (Ge)‐based devices are recognized as one of the most promising next‐generation technologies for extending Moore's law. However, one of the critical issues is Fermi‐level pinning (FLP) at the metal/n‐Ge interface, and the resulting large contact resistance seriously degrades their performance. The insertion of a thin layer is one main technique for FLP modulation; however, the contact resistance is still limited by the remaining barrier height and the resistance induced by the insertion layer. In addition, the proposed depinning mechanisms are also controversial. Here, the authors report a wafer‐scale carbon nanotube (CNT) insertion method to alleviate FLP. The inserted conductive film reduces the effective Schottky barrier height without inducing a large resistance, leading to ohmic contact and the smallest contact resistance between a metal and a lightly doped n‐Ge. These devices also indicate that the metal‐induced gap states mechanism is responsible for the pinning. Based on the proposed technology, a wafer‐scale planar diode array is fabricated at room temperature without using the traditional ion‐implantation and annealing technology, achieving an on‐to‐off current ratio of 4.59 × 104. This work provides a new way of FLP modulation that helps to improve device performance with new materials.

Fermi level depinning of Ge Schottky contacts using single crystalline MgO

Investigating The Origin Of Fermi Level Pinning In Ge Schottky Junctions Using Epitaxially Grown Ultrathin Mgo Films

Fermi Level Depinning Failure for Al/Geo2/Ge Contacts

Fermi Level Depinning in Two-Dimensional Materials Using a Fluorinated Bilayer Graphene Barrier

Revealing the Weak Fermi Level Pinning Effect of 2D Semiconductor/2d Metal Contact: A Case of Monolayer In2Ge2Te6 and Its Janus Structure In2Ge2Te3Se3

Fermi Level Depinning by A C-Containing Layer in A Metal/Ge Structure by Using A Chemical Bath

Examination of physical origins limiting effective mobility of Ge MOSFETs and the improvement by atomic deuterium annealing

Characterization of Cubic Phase MgZnO/Si(100) Interfaces

Physical mechanism determining Ge p- and n-MOSFETs mobility in high Ns region and mobility improvement by atomically flat GeOx/Ge interfaces

Alleviation of Fermi-Level Pinning Effect on Metal/Germanium Interface by Insertion of an Ultrathin Aluminum Oxide

Fermi-level depinning in metal-2D multilayered semiconductor junctions

Self-passivation Causes the Different Fermi Level Pinning between Metal-Si and Metal-Ge Contacts

Fermi-Level Pinning and Barrier Height Control at epitaxially grown ferromagnet/ZnO/metal Schottky Interfaces for opto-spintronics applications

New Insight into Fermi-level Unpinning on GaAs: Impact of Different Surface Orientations

Electrical and dielectric properties of ferromagnetic GeMn nanocrystals embedded in metal-oxide-semiconductor Schottky diodes (Al/SiO 2 :GeMn NCs/n-Si) grown by MBE

Transition from Schottky to Ohmic contacts in 2D Ge/GaAs heterostructures with high tunneling probability

Selective Passivation of GeO2/Ge Interface Defects in Atomic Layer Deposited High-k MOS Structures.

Fermi‐Level Depinning in Metal/Ge Junctions by Inserting a Carbon Nanotube Layer

Fermi-Level Pinning at the Interface Between Metals and Nitrogen-Doped Ge2sb2te5 Examined by X-Ray Photoelectron Spectroscopy

Role of Post-Deposition Annealing of Sputtered Ti on Fermi Level Depinning in Ti/TiOx/n-Ge

Fermi-level Unpinning on GaAs (111)A Surface with Direct ALD Al2O3