Abstract:Magnetic Tunnel Junctions whose basic element consists of two ferromagnetic electrodes separated by an insulating non-magnetic barrier have become intensely studied and used in non-volatile spintronic devices. Since ballistic tunnel of spin-polarized electrons sensitively depends on the chemical composition and the atomic geometry of the lead/barrier interfaces their proper design is a key issue for achieving the required functionality of the devices such as e.g. a high tunnel magneto resistance. An important leap in the development of novel spintronic devices is to replace the insulating barrier by a ferroelectric which adds new additional functionality induced by the polarization direction in the barrier giving rise to the tunnel electro resistance (TER). The multiferroic tunnel junction Co/PbZr$_{0.2}$Ti$_{0.8}$O$_{3}$/La$_{2/3}$Sr$_{1/3}$MnO$_3$ (Co/PZT/LSMO) represents an archetype system for which - despite intense studies - no consensus exists for the interface geometry and their effect on transport properties. Here we provide the first analysis of the Co/PZT interface at the atomic scale using complementary techniques, namely x-ray diffraction and extended x-ray absorption fine structure in combination with x-ray magnetic circular dichroism and ab-initio calculations. The Co/PZT interface consists of one perovskite-type cobalt oxide unit cell [CoO$_{2}$/CoO/Ti(Zr)O$_{2}$] on which a locally ordered cobalt film grows. Magnetic moments (m) of cobalt lie in the range between m=2.3 and m=2.7$\mu_{B}$, while for the interfacial titanium atoms they are small (m=+0.005 $\mu_{B}$) and parallel to cobalt which is attributed to the presence of the cobalt-oxide interface layers. These insights into the atomistic relation between interface and magnetic properties is expected to pave the way for future high TER devices.

Fermi-Level Pinning and Barrier Height Control at epitaxially grown ferromagnet/ZnO/metal Schottky Interfaces for opto-spintronics applications

Overcoming the Limits of the Interfacial Dzyaloshinskii–Moriya Interaction by Antiferromagnetic Order in Multiferroic Heterostructures

Fermi-Level Pinning, Charge Transfer, and Relaxation of Spin-Momentum Locking at Metal Contacts to Topological Insulators

Unconventional Exchange Bias and Enhanced Spin Pumping Efficiency Due to Diluted Magnetic Oxide at the Co/ZnO Interface

Perovskite-type cobalt oxide at the multiferroic Co/Pb Zr$_{0.2}$Ti$_{0.8}$O$_{3}$ interface

Tuning the Interfacial Spin-Orbit Coupling with Ferroelectricity

Ferroelectric gate control of Rashba–Dresselhaus spin–orbit coupling in ferromagnetic semiconductor (Zn, Co)O

Using atom probe tomography to understand Schottky barrier height pinning at the ZnO:Al / SiO2 / Si interface

Interfacial Charge Engineering in Ferroelectric‐Controlled Mott Transistors

Epitaxial Zn(x)Fe(3-x)O(4) Thin Films: A Spintronic Material with Tunable Electrical and Magnetic Properties

Proximity Band Structure and Spin Textures on Both Sides of Topological-Insulator/Ferromagnetic-Metal Interface and Their Charge Transport Probes.

Piezotronic effect on Rashba spin–orbit coupling based on MAPbI 3 /ZnO heterostructures

Fermi-Level-Dependent Charge-to-Spin Conversion of the Two-Dimensional Electron Gas at the γ - Interface

Energy Gap and Defects Engineered Optical, and Magnetic Properties of ZnO-based Diluted Magnetic Semiconducting Nanoparticles

Field-free spin-orbit torque switching via out-of-plane spin-polarization induced by an antiferromagnetic insulator/heavy metal interface

Modulating Spin Polarization and Spin-Orbit Interaction by Submonolayer Engineering at Interfaces

Fully Spin-transparent magnetic interfaces enabled by insertion of a paramagnetic NiO layer

Charge Control of Antiferromagnetism at Pbzr0.52ti0.48o3/La0.67sr0.33mno3 Interface

Interface magnetism and electronic structure: ZnO(0001)/Co3O4(111)

Current Spin Polarization and Spin Injection Efficiency in Zno-Based Ferromagnetic Semiconductor Junctions

Polarization-induced ultrahigh Rashba spin-orbit interaction in ZnO/CdO quantum well