Polarization-induced ultrahigh Rashba spin-orbit interaction in ZnO/CdO quantum well

Mandun Fu,Minjiang Dan,Gongwei Hu,Lijie Li,Yan Zhang
DOI: https://doi.org/10.1016/j.nanoen.2021.106310
IF: 17.6
2021-10-01
Nano Energy
Abstract:<p>Spin-orbit interaction (SOI) connecting an electronic spin with its momentum is crucial for numerous fundamental physical researches and their applications, including quantum spin Hall effect, Majorana Fermions and spin-orbit qubits. By breaking structural inversion symmetry, Rashba spin-orbit interaction (RSOI) provides an available method for the manipulation of spin by controlling electronic movement within external potential field. In this study, we demonstrate the RSOI of conduction electron modulated by stress-induced polarization field in ZnO/CdO quantum well (QW). The polarization field exactly triggers band inversion between the electron and light hole. The peak of RSOI coefficient can reach approximately up to 83 meV<span class="math"><math>⋅</math></span>nm, almost three orders of magnitude higher than the conventional GaAs-based QWs. This study can be beneficial to sufficient manipulation of spin qubits by strong RSOI quantum piezotronic effect, and will stimulate an intense researching interest in low-dimensional quantum piezotronic devices.</p>
materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
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