Interface magnetism and electronic structure: ZnO(0001)/Co3O4(111)

Igor Kupchak,Natalia Serpak,Anatoli Shkrebtii,Roland Hayn

DOI: https://doi.org/10.1103/PhysRevB.97.125304

2018-02-21

Abstract:We have studied the structural, electronic and magnetic properties of spinel $\rm Co_3O_4$(111) surfaces and their interfaces with ZnO (0001) using density functional theory (DFT) within the Generalized Gradient Approximation with on-site Coulomb repulsion term (GGA+U). Two possible forms of spinel surface, containing $\rm Co^{2+} $ and $\rm Co^{3+} $ ions and terminated with either cobalt or oxygen ions were considered, as well as their interface with zinc oxide. Our calculations demonstrate that $\rm Co^{3+} $ ions attain non-zero magnetic moments at the surface and interface, in contrast to the bulk, where they are not magnetic, leading to the ferromagnetic ordering. Since heavily Co-doped ZnO samples can contain $\rm Co_3O_4 $ secondary phase, such a magnetic ordering at the interface might explain the origin of the magnetism in these diluted magnetic semiconductors (DMS).

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to understand the magnetic and electronic structures at the ZnO(0001)/Co₃O₄(111) interface, especially to explain the origin of the ferromagnetism observed at these interfaces. Specifically, the authors focus on the following points:

1. **Origin of surface and interface magnetism**:
- In the bulk materials, Co³⁺ ions are usually non - magnetic because the electrons in their t₂g orbitals are paired. However, on the surface or at the interface, due to the broken symmetry, Co³⁺ ions can exhibit non - zero magnetic moments.
- Research shows that Co³⁺ ions obtain non - zero magnetic moments on the surface and at the interface, leading to ferromagnetic ordering.

2. **Source of magnetism in diluted magnetic semiconductors (DMS)**:
- In highly Co - doped ZnO samples, a Co₃O₄ minor phase may be formed. This interface magnetism may explain the origin of the room - temperature ferromagnetism observed in these diluted magnetic semiconductors.
- The authors pay special attention to the magnetism in the ZnO:Co system. Experiments show that this magnetism may be due to the formation of the Co₃O₄ phase.

3. **Influence of interface structure**:
- Two different types of Co₃O₄(111) surfaces (terminated with Co²⁺ or Co³⁺ ions) and their interfaces with ZnO(0001) are studied.
- Through first - principles calculations, the changes in the atomic structure, electronic band structure, and magnetic properties of these interfaces are studied.

4. **Selection of theoretical models**:
- Calculations are carried out using density functional theory (DFT) and the generalized gradient approximation (GGA + U), taking into account the influence of local Coulomb interactions on electron correlation effects.
- By comparing different Hubbard U parameter values, the reliability of the results is ensured.

5. **Experimental verification**:
- The rationality of the theoretical model is verified by experimental means such as Raman spectroscopy, proving that it is more reasonable to model the interface using the Co₃O₄ bulk lattice constant.

In summary, this paper aims to reveal the microscopic mechanism of magnetism at the ZnO/Co₃O₄ interface through theoretical calculations and experimental verification, provide new insights into understanding the magnetism in diluted magnetic semiconductors, and provide theoretical support for the design of future spintronic devices.