Abstract:A novel technique named "the single-well energy representation" is developed for analyzing the valence band structures of strained single or multiple quantum well structurer. Analysis and optimization are performed for 1.55 mu m InGaAs/InGaAsP strained multiple quantum well lasers lattice matched to InP with 1.1 mu m barrier bandgap, and some significant results are obtained. The band offsets are functions of the strain instead of constants. A certain relation exists between the strain and the well width as well as the indium composition in the InGaAs well material. The strain changes the valence band structure and the density of states, and hence affects the properties of the lasers. The compressive strain results in higher peak gain and differential gain of the TE polarization. The minimum threshold current density exists, and the well number is optimized. When the compressive strain is beyond 0.5%, the optimum well number varies slowly, in particular, the minimum threshold current density varies very slightly, and it nearly maintains a constant. The optimum well number and the minimum threshold current density decrease with an increase in the cavity length. For an about 1000 mu m cavity length, the optimum well number is about 1 in the range of compressive strain from 0.4% to 3.0%. In this case the single quantum well laser has the lowest threshold current density.

Reduction of Noise Figure in Semiconductor Laser Amplifiers with Ga/sub 1-X/in/sub X/as/gainasp/inp Strained Quantum Well Structures

Theoretical Linewidth Enhancement Factor Alpha of Ga/sub 1-X/in/sub X/as/gainasp/inp Strained-Quantum-well Structures

Saturation Characteristics of Ga/sub 0.68/in/sub 0.32/as/gainasp/inp Tensile-Strained Quantum-Well Semiconductor Laser Amplifiers with Tapered-Waveguide Structures

Saturation Characteristics of Ga1-xInxAs/GaInAsP/InP Tensile-Strained Quantum-Well Semiconductor Laser Amplifiers with Tapered Waveguide Structures

Theoretical Study of Linewidth Enhancement Factor of InGaAs/GaAs Strained Quantum Well Lasers

Analysis and optimization of 1.55 μm InGaAs/InGaAsP strained multiple quantum well lasers

Threshold Characteristics of 1.55-Μm InGaAs/InGaAsP Strain-Compensated Quantum Well Lasers with Zero Net Strain

InAsP/InGaAsP quantum-well 1.3 [micro sign]m vertical-cavity surface-emitting lasers

Characteristic Analysis Of Ingaas/Ingaasp Strained Quantum Well Lasers

Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well

Theoretical analysis of band structure and material gain of InGaAs quantum wells in a semiconductor disk laser

Band structures and characteristics of InGaAs/InGaAsP strain-compensated quantum well lasers

Single Mode Operation of Short-Cavity Quantum Cascade Lasers

IaAsP/InGaAsP quantum-well 1.3 μm vertical-cavity surface-emitting lasers

Gain Characteristics of the Ingaas Strained Quantum Wells with Gaas, Algaas, and Gaasp Barriers in Vertical-External-Cavity Surface-Emitting Lasers

InP-based InGaAs/InAlGaAs Digital Alloy Quantum Well Laser Structure at 2 Μm

Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs

Self-Pulsation Dynamics in GaAs/AIGaAs Quantum Cascade Lasers

The Strain, Energy Band and Photoluminescence of GaAs0.92Sb0·08/Al0.3Ga0.7As Multiple Quantum Wells Grown on GaAs Substrate

1.5 μm in GaAsP/InP strained MQW gain-coupled DFB laser with an improved periodically modulated injection-carrier grating

Gain characteristics of Ga1-xInxAs/GaInAsP/InP tensile-strained quantum well