Mid-IR Nonlinear Integrated Photonics: Physics and Devices

Osgood, R.M.,Xiaoping Liu,Lavdas, S.,Dadap, J.

DOI: https://doi.org/10.1109/SUM.2014.59

2014-01-01

Abstract:We discuss our recent developments using silicon nanophotonic wires as nonlinear media at mid-IR wavelengths both to observe nonlinear optical physics and to explore specific application.

What problem does this paper attempt to address?

Nonlinear Silicon Nanophotonics for Mid-Infrared Applications

Green, W.M.J.,Xiaoping Liu,Kuyken, B.,Osgood, R.M.

DOI: https://doi.org/10.1109/ico-ip.2011.5953808

2011-01-01

Abstract:The silicon nanophotonic wire platform can be applied toward development of integrated optical devices for the generation and processing of mid-infrared light signals. The demonstration of a mid-infrared optical parametric amplifier will be reviewed, and recent work aimed at expanded gain bandwidth and reduced pump power requirements will be presented.
Mid-infrared Integrated Photonics on Silicon: a Perspective

Hongtao Lin,Zhengqian Luo,Tian Gu,Lionel C. Kimerling,Kazumi Wada,Anu Agarwal,Juejun Hu

DOI: https://doi.org/10.1515/nanoph-2017-0085

IF: 7.5

2018-01-01

Nanophotonics

Abstract:The emergence of silicon photonics over the past two decades has established silicon as a preferred substrate platform for photonic integration. While most silicon-based photonic components have so far been realized in the near-infrared (near-IR) telecommunication bands, the mid-infrared (mid-IR, 2–20-μm wavelength) band presents a significant growth opportunity for integrated photonics. In this review, we offer our perspective on the burgeoning field of mid-IR integrated photonics on silicon. A comprehensive survey on the state-of-the-art of key photonic devices such as waveguides, light sources, modulators, and detectors is presented. Furthermore, on-chip spectroscopic chemical sensing is quantitatively analyzed as an example of mid-IR photonic system integration based on these basic building blocks, and the constituent component choices are discussed and contrasted in the context of system performance and integration technologies.
Nonlinear Third Order Silicon Photonics Enabled by Dispersion and Subwavelength Engineering

Christian Lafforgue,Samuel Serna,Sylvain Guerber,Hongtao Lin,Joan Manel Ramirez,Guillaume Marcaud,Carlos Alonso-Ramos,Xavier Le Roux,Kathleen A. Richardson,Nicolas Dubreuil,Delphine Marris-Morini,Juejun Hu,Frédéric Boeuf,Sébastien Cremer,Stéphane Monfray,Eric Cassan,Laurent Vivien

DOI: https://doi.org/10.1364/oedi.2019.ow1c.2

2019-01-01

Abstract:Integrated photonics has for several years included in its panoply the development of functions based on third-order non-linear optical phenomena, from the generation of supercontinuum or frequency comb sources to metrology or spectroscopy on chip applications. This natural evolution, after the development of high-speed transceivers in the last few years, particularly in silicon photonics, is based on a number of compromises and still has to solve problems, particularly concerning the integration of nonlinear materials on silicon and their exploitation. The work we present addresses two directions. The first is oriented towards the development of a supercontinuum source using Nitrogen-rich photonic circuits from an industrial CMOS platform, while the second aims at the development of hybrid highly nonlinear waveguides significantly reducing the impact of twophoton absorption in the telecom window around 1,55μm by exploiting silicon slot waveguides infiltrated by chalcogenide glasses (As2S3).
Nonlinear Optics in Silicon Wire Waveguides: Towards Integrated Long Wavelength Light Sources

Kuyken Bart,Liu Xiaoping,Osgood Richard M.,Baets Roel,Roelkens Gunther,Green William M.

DOI: https://doi.org/10.1557/opl.2012.1323

2012-01-01

Abstract:Most of the research on silicon-on-insulator integrated circuits so far has been focused on applications for telecommunication. By using the large refractive index of silicon, compact complex photonic functions have been integrated on a silicon chip. However, the transparency of silicon up to 8.5 μm enables the use of the platform for the mid infrared wavelength region, albeit limited by the absorption in silicon oxide from 4 μm on. This could lead to a whole new set of integrated photonics circuits for sensing, given the distinct absorption bands of many molecules in this wavelength region. These long wavelength integrated photonic circuits would preferably need broadband or widely tunable sources to probe these absorption bands. We propose the use of nonlinear optics in silicon wire waveguides to generate light in this wavelength range. Nonlinear interactions in just a few cm of silicon wire waveguides can be very efficient as a result of both the high nonlinear index of silicon and the high optical confinement obtained in these waveguides. We demonstrate the generation of a supercontinuum spanning from 1.53 μm up to 2.55 μm in a 2 cm dispersion engineered silicon nanowire waveguide by pumping the waveguide with strong picoseconds pulses at 2.12 μm [1]. Furthermore we demonstrate broadband nonlinear optical amplification in the mid infrared up to 50 dB [2] in these silicon waveguides. By using this broadband parametric gain a silicon-based synchronously pumped optical parametric oscillator (OPO) is constructed [3]. This OPO is tunable over 70 nm around a central wavelength of 2080 nm. Finally, we also demonstrate the use of higher order dispersion terms to get phase matching between optical signals at very different optical frequencies in silicon wire waveguides. In this way we demonstrate conversion of signals at 2.44 μm to the telecommunication band with efficiencies up to +19.5 dB [4]. One particularly attractive application of such wide conversion is the possibility of converting weak signals in the mid-IR to the telecom window after which they can be detected by a high-sensitivity telecom-band optical receiver.
Silicon Coupled Cavities As a Flexible Platform for Integrated Nonlinear Photonics

Xin Cui,Weiwei Zhang,Samuel Serna,Xavier Le Roux,Carlos Alonso-Ramos,Delphine Marris-Morini,Laurent Vivien,Jian-Jun He,Eric Cassan

DOI: https://doi.org/10.1117/12.2305909

2018-01-01

Abstract:Multiply resonant silicon photonic devices based on three coupled nanobeam cavities are proposed engineer third order nonlinearities at wavelengths around lambda = 1.55 mu m. We show that varying the geometrical parameters allows a flexible tuning of linear properties of the system, especially the deviations between the cavity resonance wavelengths. Based on the linear regime results, the nonlinear properties of the system are studied using coupled mode expressions of the super-modes given by the Tight-Binding method for the calculation of the nonlinear integrals controlling the intensity of the third-order nonlinear effects of the photonic molecules. We geometrically control the self-phase modulation (SPM), the cross-phase modulation (XPM), and the degenerate four-wave mixing (DFWM) nonlinear coefficients of the three coupled nanobeam cavities and identify general trends for nonlinear applications such as optical switching and frequency conversion devices.
Heterogeneously integrated MIR silicon photonics

Yu Chen,Hongtao Lin,Juejun Hu,Mo Li

DOI: https://doi.org/10.1364/cleo_si.2014.sw1m.5

2014-01-01

Abstract:By utilizing heterogeneous integration method, integrated silicon photonics on mid-IR compatible substrate has been fabricated and on-chip cavity-enhanced mid-IR spectroscopic analysis of organic chemicals has been demonstrated.
Mid-Ir Heterogeneous Silicon Photonics

g roelkens,utsav dave,a gassenq,n hattasan,chen hu,bart kuyken,francois leo,aditya malik,m muneeb,e ryckeboer,sarah uvin,zeger hens,roel baets,yosuke shimura,f gencarelli,b vincent,roger loo,joris van campenhout,l cerutti,jeanbaptiste rodriguez,e tournie,xia chen,milos nedeljkovic,g z mashanovich,li shen,n healy,a c peacock,xiaoping liu,r m osgood,william m j green

DOI: https://doi.org/10.1117/12.2041226

2014-01-01

Abstract:In this paper we discuss silicon-based photonic integrated circuit technology for applications beyond the telecommunication wavelength range. Silicon-on-insulator and germanium-on-silicon passive waveguide circuits are described, as well as the integration of III-V semiconductors, IV-VI colloidal nanoparticle films and GeSn alloys on these circuits for increasing the functionality. The strong nonlinearity of silicon combined with the low nonlinear absorption in the mid-infrared is exploited to generate picosecond pulse based supercontinuum sources and optical parametric oscillators that can be used as spectroscopic sensor sources.
Engineering Nonlinearities In Nanoscale Optical Systems: Physics And Applications In Dispersion-Engineered Silicon Nanophotonic Wires

R. M. Osgood,N. C. Panoiu,J. I. Dadap,Xiaoping Liu,Xiaogang Chen,I-Wei Hsieh,E. Dulkeith,W. M. J. Green,Y. A. Vlasov

DOI: https://doi.org/10.1364/AOP.1.000162

IF: 24.75

2009-01-01

Advances in Optics and Photonics

Abstract:The nonlinear optics of Si photonic wires is discussed. The distinctive features of these waveguides are that they have extremely large third-order susceptibility chi((3)) and dispersive properties. The strong dispersion and large third-order nonlinearity in Si photonic wires cause the linear and nonlinear optical physics in these guides to be intimately linked. By carefully choosing the waveguide dimensions, both linear and nonlinear optical properties of Si wires can be engineered. We review the fundamental optical physics and emerging applications for these Si wires. In many cases, the relatively low threshold powers for nonlinear optical effects in these wires make them potential candidates for functional on-chip nonlinear optical devices of just a few millimeters in length; conversely, the absence of nonlinear optical impairment is important for the use of Si wires in on-chip interconnects. In addition, the characteristic length scales of linear and nonlinear optical effects in Si wires are markedly different from those in commonly used optical guiding systems, such as optical fibers or photonic crystal fibers, and therefore guiding structures based on Si wires represent ideal optical media for investigating new and intriguing physical phenomena.
Ultra-silicon-rich Nitride Based Devices for High Nonlinear Figure of Merit Photonics Applications

D. T.H. Tan,K.J. A. Ooi,D. K.T. Ng,E. Sahin,J. W. Choi,P. Xing,G.F.R. Chen,B. U. Sohn

DOI: https://doi.org/10.1364/cleopr.2018.w4b.1

2018-01-01

Abstract:Nonlinear optics leveraging CMOS-compatible, ultra-silicon-rich nitride devices is presented. Films are engineered to possess high Kerr nonlinearity and negligible two-photon absorption at telecommunications wavelengths. We demonstrate high-gain optical parametric amplifiers, wavelength conversion, supercontinuum sources and slow light enhanced devices.
Optical nonlinear devices

michael cada,jianjun he,r normandin,hongxing dai,siegfried janz

DOI: https://doi.org/10.1117/12.557825

2003-01-01

Abstract:This invited plenary contribution presents some of our recent results in the area of optical nonlinear devices. It also briefly reviews the origins and past developments of what became a field of photonics. In conclusion it makes an attempt to suggest where photonics research might be directed in the future, which would truly materialize its inherent pervasiveness.
Silicon Photonic Devices For The Mid-Infrared

M-Said Rouifed,Callum G. Littlejohns,Guo Xin Tina,Jia Xu Sia,Haodong Qiu,Jordi Soler Penades,Milos Nedeljkovic,Zecen Zhang,C. Y. Liu,David J. Thomson,Goran Z. Mashanovich,Graham T. Reed,Hong Wang

DOI: https://doi.org/10.1109/CLEOPR.2017.8119001

2017-01-01

Abstract:In this paper, we present our recent results on the development of passive devices for short-wave infrared and MIR applications. SOI platform is used and several devices, like waveguides, MMIs, spirals, unbalanced MZI, are designed, fabricated and characterized at the wavelengths of 2 mu m and 3.8 mu m.
Recent Progress of Silicon Photonics for Middle-Infrared Application

Shu Haowen,Su Zhaotang,Wang Xingjun,Zhou Zhiping

DOI: https://doi.org/10.11959/j.issn.1000-0801.2015274

2015-01-01

Abstract:“Capacity Crunch”in NIR field needs to be forestalled since the pressure of information transmission，processing and storage is continually growing.Silicon photonics，with compatibility of CMOS，compact structure and low fabrication cost，shows its superiority in the field of mid-IR transmission and signal processing.Thus a lead forward is excepted to be realized in large-scale integration of mid-IR devices and nonlinear optical and other field.The strengths and challenge of silicon photonics in mid-IR application were estimated firstly.Then some“building block”components of silicon photonics in mid-IR（waveguides，beam splitter/combiner，diode，etc）were introduced.Achievements of devices （nonlinear optical devices based on FWM，frequency comb in sensing field and laser，modulator，detector in communication field）within the last five years were presented.Finally，the conclusion was made for recent research progress.
Development of Silicon Photonic Devices for Optical Interconnects

Xi Xiao,ZhiYong Li,Tao Chu,Hao Xu,XianYao Li,Anastasia Nemkova,Xiong Kang,YuDe Yu,JinZhong Yu

DOI: https://doi.org/10.1007/s11431-012-5120-2

2013-01-01

Science China Technological Sciences

Abstract:Silicon photonic devices based on complementary-metal-oxide-semiconductor (CMOS) compatible technologies have shown attractive performances on very-large-scale monolithic optoelectronic integration, high speed modulation and switching, and efficient off-chip optical coupling. This paper presents the recent progress on fast silicon optical modulation, wavelength-insensitive optical switching and efficient optical coupling techniques in our group. Several CMOS-compatible silicon optical couplers with different structures have been developed, showing the highest coupling efficiency of 65%. Broadband silicon-based optical switches with sub-nanosecond switching on-off time are experimentally realized. Silicon modulators with novel PN junctions are demonstrated with the speed up to 50 Gb s −1 .
Silicon-integrated nonlinear III-V photonics

Weiqiang Xie,Chao Xiang,Lin Chang,Warren Jin,Jonathan Peters,John E. Bowers

DOI: https://doi.org/10.1364/PRJ.446898

IF: 7.6

2022-02-03

Photonics Research

Abstract:Mainstream silicon photonic integrated circuits are based on compact and low-loss silicon-on-insulator (SOI) waveguide platforms. However, monolithic SOI-based photonics provides only a limited number of functional device types. Here, to extend the on-chip capabilities, we propose a general heterogeneous integration approach to embed highly nonlinear III-V (AlGaAs) photonics into the SOI platform. We develop low-loss AlGaAs-on-SOI photonic circuits with integrated Si waveguides and showcase sub-milliwatt-threshold ( ∼0.25 mW ) Kerr frequency comb generation in ultrahigh- Q AlGaAs microrings ( Q over 106 ) at the telecom bands. Our demonstration complements existing mature Si photonics technology with efficient nonlinear functionalities provided by III-V and propels conventional Si photonics into emerging nonlinear photonic applications towards fully chip-based nonlinear engines. © 2022 Chinese Laser Press

optics
Mid-Infrared Light Sources Using Parametric Amplification in Silicon Nanophotonic Wires

William M. J. Green,Bart Kuyken,Xiaoping Liu,Richard M. Osgood,Roel Baets,Günther Roelkens

DOI: https://doi.org/10.1364/fio.2012.fm4i.4

2012-01-01

Abstract:Progress toward realizing silicon-based mid-IR light sources will be reviewed. Using silicon nanophotonic wire parametric amplifiers as compact high-gain elements, synchronously-pumped wavelength-tunable mid-IR optical parametric oscillators and broadband supercontinuum sources have been demonstrated.
Silicon Photonics As A Broadband Platform For Parametric Oscillation In The Mid-Infrared

Steven A. Miller,Mengjie Yu,Xingchen Ji,Austin G. Griffith,Jaime Cardenas,Alexander L. Gaeta,Michal Lipson

DOI: https://doi.org/10.1364/cleo_si.2017.stu4j.6

2017-01-01

Abstract:We demonstrate that silicon photonics can be leveraged for nonlinear optics in the mid-infrared range from 3-6 mu m. We fabricate an air-clad microresonator with Q=1 million at 3.79 mu m wavelength and demonstrate 5.3mW parametric oscillation threshold power.
Nonlinear-Optic Silicon-Nanowire Waveguides

Hirohito Yamada,Masayuki Shirane,Tao Chu,Hiroyuki Yokoyama,Satomi Ishida,Yasuhiko Arakawa

DOI: https://doi.org/10.1143/JJAP.44.6541

2005-01-01

Abstract:Using a 4-mm-long compact silicon-nanowire waveguide, we demonstrated nonlinear-optic effects such as the spectral broadening of optical short pulses due to self-phase modulation and nonlinear transmittance due to two-photon absorption. At a 12W input power level, we observed a 1.5-pi nonlinear phase shift and a strong saturation of optical output power in a sample. We also estimated the third-order nonlinear coefficient 112 and the two-photon absorption coefficient beta, and compared them with those previously reported.
Nonlinear-optical Phase Modification in Dispersion-Engineered Si Photonic Wires.

J. I. Dadap,N. C. Panoiu,Xiaogang Chen,I-Wei Hsieh,Xiaoping Liu,Cheng-Yun Chou,E. Dulkeith,S. J. McNab,Fengnian Xia,W. M. J. Green,L. Sekaric,Y. A. Vlasov,R. M. Osgood

DOI: https://doi.org/10.1364/oe.16.001280

IF: 3.8

2008-01-01

Optics Express

Abstract:The strong dispersion and large third-order nonlinearity in Si photonic wires are intimately linked in the optical physics needed for the optical control of phase. By carefully choosing the waveguide dimensions, both linear and nonlinear optical properties of Si wires can be engineered. In this paper we provide a review of the control of phase using nonlinear-optical effects such as self-phase and cross-phase modulation in dispersion-engineered Si wires. The low threshold powers for phase-changing effects in Si-wires make them potential candidates for functional nonlinear optical devices of just a few millimeters in length.
Stimulated Raman Scattering in Nonlinear Silicon Nanophotonic Waveguides: Theory and Applications in Photonic Integrated Circuits

Abdurrahman Javid Shaikh,Othman Sidek

2024-12-03

Abstract:Photonics caught world attention since channel capacity limit of metallic interconnects approached due to research and design in high speed digital processors. Use of dielectrics, instead, suitable for light propagation was more attractive due to its extremely wide bandwidth. Many of the devices, both active and passive, have been demonstrated using these insulating materials. Due to its excellent optical characteristics, established fabrication history, and cheaper throughput, silicon found its place in photonics arena. However, due to its indirect band structure, efficient light sources are not possible using silicon as the base material. Nevertheless, techniques such as stimulated Raman scattering and third-harmonic generation have made it possible to avoid this natural hurdle in the path of silicon as a light source. This paper reviews basic theory of stimulated Raman scattering, its applications in the context of silicon based photonic integrated circuits and describes ways to improve this nonlinear effect. This paper also covers few of the most important demonstrations of stimulated Raman scattering published in literature from the last decade.

Optics,Signal Processing,Systems and Control,Applied Physics
Multi-photon absorption and third-order nonlinearity in silicon at mid-infrared wavelengths.

Ting Wang,Nalla Venkatram,Jacek Gosciniak,Yuanjing Cui,Guodong Qian,Wei Ji,Dawn T H Tan

DOI: https://doi.org/10.1364/OE.21.032192

IF: 3.8

2013-01-01

Optics Express

Abstract:Silicon based nonlinear photonics has been extensively researched at telecom wavelengths in recent years. However, studies of Kerr nonlinearity in silicon at mid-infrared wavelengths still remain limited. Here, we report the wavelength dependency of third-order nonlinearity in the spectral range from 1.6 μm to 6 μm, as well as multi-photon absorption coefficients in the same range. The third-order nonlinear coefficient n2 was measured with a peak value of 1.65 × 10(−13) cm2/W at a wavelength of 2.1 μm followed by the decay of nonlinear refractive index n2 up to 2.6 μm. Our latest measurements extend the wavelength towards 6 μm, which show a sharp decrement of n2 beyond 2.1 μm and steadily retains above 3 μm. In addition, the analysis of three-photon absorption and four-photon absorption processes are simultaneously performed over the wavelength range from 2.3 μm to 4.4 μm. Furthermore, the effect of multi-photon absorption on nonlinear figure of merit in silicon is discussed in detail.

Mid-IR Nonlinear Integrated Photonics: Physics and Devices

Nonlinear Silicon Nanophotonics for Mid-Infrared Applications

Mid-infrared Integrated Photonics on Silicon: a Perspective

Nonlinear Third Order Silicon Photonics Enabled by Dispersion and Subwavelength Engineering

Nonlinear Optics in Silicon Wire Waveguides: Towards Integrated Long Wavelength Light Sources

Silicon Coupled Cavities As a Flexible Platform for Integrated Nonlinear Photonics

Heterogeneously integrated MIR silicon photonics

Mid-Ir Heterogeneous Silicon Photonics

Engineering Nonlinearities In Nanoscale Optical Systems: Physics And Applications In Dispersion-Engineered Silicon Nanophotonic Wires

Ultra-silicon-rich Nitride Based Devices for High Nonlinear Figure of Merit Photonics Applications

Optical nonlinear devices

Silicon Photonic Devices For The Mid-Infrared

Recent Progress of Silicon Photonics for Middle-Infrared Application

Development of Silicon Photonic Devices for Optical Interconnects

Silicon-integrated nonlinear III-V photonics

Mid-Infrared Light Sources Using Parametric Amplification in Silicon Nanophotonic Wires

Silicon Photonics As A Broadband Platform For Parametric Oscillation In The Mid-Infrared

Nonlinear-Optic Silicon-Nanowire Waveguides

Nonlinear-optical Phase Modification in Dispersion-Engineered Si Photonic Wires.

Stimulated Raman Scattering in Nonlinear Silicon Nanophotonic Waveguides: Theory and Applications in Photonic Integrated Circuits

Multi-photon absorption and third-order nonlinearity in silicon at mid-infrared wavelengths.