Abstract:We discuss the role of aluminum oxide (i.e. Al2O3 when stoichiometric) for transistors and sensors based on oxide semiconductors such as InGaZnO (IGZO) and two-dimensional (2D) semiconductors, such as monolayer MoS2. Aluminum oxide is a well-known capping and dielectric layer in semiconductor technology typically deposited by atomic-layer deposition (ALD), which offers a dense and high-quality film with low gas permeability even when deposited on flexible substrates. However, when deposited at low temperature (< 200C), aluminum oxide can include a significant amount of fixed charges and defects, which lead to unusual charge trapping and doping effects in semiconductor devices. For example, such charge trapping can cause (apparent) sub-60 mV/decade subthreshold swing at room temperature in IGZO transistors, but can also lead to potential applications in neuromorphic computing. We also discuss effective doping (~1013 cm-2) of 2D semiconductors by thin ALD-grown non-stoichiometric AlOx capping layers. This is achieved with an aluminum seed layer, which enables uniform growth of the subsequently deposited ALD film. This approach leads to a negative shift in threshold voltage, record on-state current (~700 A/m) in a monolayer semiconductor, and drastic reduction in contact resistance. Finally, we investigate the passivation effects of Al2O3 capping, which limits the interaction of the underlying semiconductors with ambient air and moisture. We demonstrate improved response in MoS2 temperature sensors and long-term stability in flexible MoS2 transistors (8 months). Further, we evaluate the effects of Al2O3 passivation on IGZO transistors after aging for 80 months.

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Electrical Properties of Al2O3 Gate Dielectrics

Study of Interfacial Oxide Layer of LaAlO 3 Gate Dielectrics on Si for Metal–insulator–semiconductor Devices

Fabrication Process and Leakage Current Conduction Mechanisms of Al2O3 Gate Dielectric Thin Films

Characteristics of LaAlO3 Gate Dielectrics on Si Grown by Metalorganic Chemical Vapor Deposition

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Annealing Effect and Leakage Current Transport Mechanisms of High K Ternary GdAlOx Gate Dielectrics

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Growth behavior of high k LaAlO3 films on Si by metalorganic chemical vapor deposition for alternative gate dielectric application

Aluminum oxide as a dielectric and passivation layer for (flexible) metal-oxide and 2D semiconductor devices

Al 2 O 3 / NbAlO / Al 2 O 3 Sandwich Gate Dielectric Film on InP

Interfacial Structure and Electrical Properties of LaAlO 3 Gate Dielectric Films on Si by Metalorganic Chemical Vapor Deposition

Properties of high-k gate dielectric LaAlO3 thin films