Abstract:Conventional complementary metal-oxide-semiconductor (CMOS) technology is now approaching its physical scaling limits to enable Moore's law to continue. Spintronic devices, as one of the potential alternatives, show great promise to replace CMOS technology for next-generation low-power integrated circuits in nanoscale technology nodes. Until now, spintronic memory has been successfully commercialized. However spintronic logic still faces many critical challenges (e.g. direct cascading capability and small operation gain) before it can be practically applied. In this paper, we propose a standard complimentary spintronic logic (CSL) design methodology to form a CMOS-like logic design paradigm. Using the spin Hall effect (SHE)-driven magnetic tunnel junction (MTJ) device as an example, we demonstrate CSL implementation, functionality and performance. This logic family provides a unified design methodology for spintronic logic circuits and partly solves the challenges of direct cascading capability and small operation gain in the previously proposed spintronic logic designs. By solving a modified Landau-Lifshitz-Gilbert equation, the magnetization dynamics in the free layer of the MTJ is theoretically described and a compact electrical model is developed. With this electrical model, numerical simulations have been performed to evaluate the functionality and performance of the proposed CSL design. Simulation results demonstrate that the proposed CSL design paradigm is rather promising for low-power logic computing.

Spin Transfer Torque Memories and Logic Gates

Self-Enabled "Error-Free" Switching Circuit For Spin Transfer Torque Mram And Logic

Giant spin hall effect (GSHE) logic design for low power application

New non-volatile logic based on spin-MTJ

Complementary Spintronic Logic with Spin Hall Effect-Driven Magnetic Tunnel Junction

Reconfigurable spintronic logic gate utilizing precessional magnetization switching

Compact Modeling of High Spin Transfer Torque Efficiency Double-Barrier Magnetic Tunnel Junction.

Anomalous Thermal-Assisted Spin-Orbit Torque-Induced Magnetization Switching for Energy-Efficient Logic-in-Memory

Low Power Computing Using STT-MRAM

Computing with spins and magnets

High-Density, Low-Power Voltage-Control Spin Orbit Torque Memory with Synchronous Two-Step Write and Symmetric Read Techniques.

Electrical Modeling of Stochastic Spin Transfer Torque Writing in Magnetic Tunnel Junctions for Memory and Logic Applications

Spintronic Logic Design Methodology Based on Spin Hall Effect-Driven Magnetic Tunnel Junctions

Experimental Demonstration of NAND-Like Spin-Torque Memory Unit

Spintronics for Low-Power Computing

Emerging Spintronic Devices: from Ultra-High-Density Memory to Logic-In-Memory

A Programmable Multi-State Logic-in-memory in a Single Unit Based on Spin–orbit Torque

Advanced Low Power Spintronic Memories Beyond STT-MRAM

High-Density NAND-Like Spin Transfer Torque Memory with Spin Orbit Torque Erase Operation

Spintronic logic: from transducers to logic gates and circuits

STT-MRAM Based Low Power Synchronous Non-Volatile Logic with Timing Demultiplexing