Abstract:Recently, carbon nanotube field-effect transistors (CNTFETs) have garnered significant attention from VLSI engineers due to their exceptional electrical properties. This paper proposes a novel high-speed, low-power eight-transistor (8 T) static random-access memory (SRAM) cell based on 32-nm CNTFET technology. The SRAM cell was simulated using the HSPICE tool with a V DD of 0.9 V. The high-speed and low-power characteristics of the SRAM design are attributed to the high subthreshold slope and high carrier mobility of metal-oxide-semiconductor field-effect transistor (MOSFET)-like CNTFETs utilized in the simulations. The implementation of dual threshold transistors, coupled with a transmission gate for bitline access, contributes to the enhanced performance. Key performance metrics such as noise margins, power consumption, delay, and SRAM electrical quality metric (SEQM) of the proposed SRAM have been evaluated and compared with existing CNTFET-based SRAM designs. The proposed cell demonstrates reductions of 73.73%, 43.18%, and 58.70% in read power, write power, and hold power, respectively, compared to the lowest respective power values of other examined SRAM designs. The proposed SRAM ranks second, third, and second in write static noise margin (WSNM), hold static noise margin (HSNM), and read static noise margin (RSNM), respectively, among other designs. Additionally, the proposed SRAM exhibits the least sensitivity to parametric variations compared to other designs. The SEQM, which provides a comprehensive assessment of access times, noise margins, and power usage for the SRAM cell, has been calculated. The SEQM of the proposed SRAM is 10.6, 1.89, 13.15, and 1.82 times higher than that of C6T, BLP8T, Mani's 10 T, and LP8T, respectively.

Low-leakage 9-CN-MOSFET SRAM Cell with Enhanced Read and Write Voltage Margins

A Novel Robust and Low-Leakage SRAM Cell with Nine Carbon Nanotube Transistors

Metallic-carbon-nanotube-removal tolerant SRAM cell with 9 transistors

High-Yield and Robust 9T SRAM Cell Tolerant to Removal of Metallic Carbon Nanotubes

A carbon nano-tube field effect transistor based stable, low-power 8T static random access memory cell with improved write access time

Reliable single-ended ultra-low power GNRFETs-based 9T SRAM cell with improved read and write operations

CNTFET-based Data Independent Power Efficient and Robust 8T SRAM Cell

Design analysis of a low-power, high-speed 8 T SRAM cell using dual-threshold CNTFETs

A Low-Energy, Stable, Single-Bitline Accessed FinFET 9T-SRAM

A CNTFET Based Stable, Single-Ended 7T SRAM cell With Improved Write Operation

A Read-Disturb-free and Write-Ability Enhanced 9T SRAM with Data-Aware Write Operation

Carbon-Based Three-Dimensional SRAM Cell with Minimum Inter-Layer Area Skew Considering Process Imperfections

Half-Select Disturb-Free 10T Tunnel FET SRAM Cell with Improved Noise Margin and Low Power Consumption

Carbon Nanotube SRAM in 5-Nm Technology Node Design, Optimization, and Performance Evaluation—Part I: CNFET Transistor Optimization

Low-power and robust ternary SRAM cell with improved noise margin in CNTFET technology

Carbon Nanotube SRAM in 5-Nm Technology Node Design, Optimization, and Performance Evaluation—Part II: CNT Interconnect Optimization

Low voltage SRAM design using tunneling regime of CNTFET

A Subthreshold 10T SRAM Cell with Enhanced Read and Write Operations

A Low Standby-Power Fast Carbon Nanotube Ternary SRAM Cell with Improved Stability

A 256kb 9T Near-Threshold SRAM With 1k Cells per Bit-Line and Enhanced Write and Read Operations

Novel high-performance SRAM cell design using 9T