Abstract:Recently, carbon nanotube field-effect transistors (CNTFETs) have garnered significant attention from VLSI engineers due to their exceptional electrical properties. This paper proposes a novel high-speed, low-power eight-transistor (8 T) static random-access memory (SRAM) cell based on 32-nm CNTFET technology. The SRAM cell was simulated using the HSPICE tool with a V DD of 0.9 V. The high-speed and low-power characteristics of the SRAM design are attributed to the high subthreshold slope and high carrier mobility of metal-oxide-semiconductor field-effect transistor (MOSFET)-like CNTFETs utilized in the simulations. The implementation of dual threshold transistors, coupled with a transmission gate for bitline access, contributes to the enhanced performance. Key performance metrics such as noise margins, power consumption, delay, and SRAM electrical quality metric (SEQM) of the proposed SRAM have been evaluated and compared with existing CNTFET-based SRAM designs. The proposed cell demonstrates reductions of 73.73%, 43.18%, and 58.70% in read power, write power, and hold power, respectively, compared to the lowest respective power values of other examined SRAM designs. The proposed SRAM ranks second, third, and second in write static noise margin (WSNM), hold static noise margin (HSNM), and read static noise margin (RSNM), respectively, among other designs. Additionally, the proposed SRAM exhibits the least sensitivity to parametric variations compared to other designs. The SEQM, which provides a comprehensive assessment of access times, noise margins, and power usage for the SRAM cell, has been calculated. The SEQM of the proposed SRAM is 10.6, 1.89, 13.15, and 1.82 times higher than that of C6T, BLP8T, Mani's 10 T, and LP8T, respectively.

High-Yield and Robust 9T SRAM Cell Tolerant to Removal of Metallic Carbon Nanotubes

Metallic-carbon-nanotube-removal tolerant SRAM cell with 9 transistors

Metallic-CN-Removal-Tolerant High-Yield Six-CN-MOSFET SRAM Cell for Carbon-Based Embedded Memory

A Novel Robust and Low-Leakage SRAM Cell with Nine Carbon Nanotube Transistors

Low-leakage 9-CN-MOSFET SRAM Cell with Enhanced Read and Write Voltage Margins

Statistical Modeling and Design of a 16nm 9T SRAM Cell Considering Post-Synthesis Removal of Metallic Carbon-Nanotubes

Monolithic 3D Carbon Nanotube Memory for Enhanced Yield and Integration Density

Carbon-Based Three-Dimensional SRAM Cell with Minimum Inter-Layer Area Skew Considering Process Imperfections

Aligned carbon nanotube integrated circuit downsizing toward a sub-10 nm node

High‐Performance and Radiation‐Hard Carbon Nanotube Complementary Static Random‐Access Memory

A carbon nano-tube field effect transistor based stable, low-power 8T static random access memory cell with improved write access time

Nanoscale Memory Cell Based on a Nanoelectromechanical Switched Capacitor

Robust Monolithic 3D Carbon-Based Computing-in-SRAM with Variation-Aware Bit-Wise Data-Mapping for High-Performance and Integration Density

Design analysis of a low-power, high-speed 8 T SRAM cell using dual-threshold CNTFETs

Defect Tolerance for CNFET-based SRAMs

Cnt Based Mechanical Devices for Ulsi Memory

Design and modelling of different SRAM's based on CNTFET 32nm technology

Low-power and robust ternary SRAM cell with improved noise margin in CNTFET technology

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

A Novel Test Method for Metallic CNTs in CNFET-Based SRAMs.

Modeling and Simulation of RRAM with Carbon Nanotube Electrode