A Critical Analysis and Comparison of the Effect of Source Inductance on 3- and 4-Lead SuperJunction MOSFETs Turn-Off
Santi Agatino Rizzo,Nunzio Salerno,Cristina Ventura,Alfio Scuto,Giuseppe Sorrentino
DOI: https://doi.org/10.3390/electronics13204051
IF: 2.9
2024-10-16
Electronics
Abstract:This paper critically compares the turn-off performance of two package solutions, 3-lead (3L) vs. 4-lead (4L), in SuperJunction MOSFETs. It is commonly assumed that the better performance (lower switching losses) of the 4L MOSFET is obtained thanks to the decoupling of the power and driving loops. On the contrary, in this work, the experimental results, circuit models and Kirchhoff laws show that the turn-off improvement (lower turn-off losses) obtained by adopting the Kelvin source is due to the lower inductance of the driver loop of the 4L MOSFET, instead of the decoupling between the driver and power loops. In detail, an inductor is added to the gate path of the 4L MOSFET to obtain a total inductance in the driver loop equal to the 3L counterpart. The experimental results show that the 4L MOSFET presents the same drain current slew rate under this condition, although the driver and power loops are still decoupled.
engineering, electrical & electronic,computer science, information systems,physics, applied