Electro-optic OR/NOR Directed Logic Device at 10 GHz Based on Carrier-Depletion Silicon Microring Resonators

Ping Zhou,Lei Zhang,Lin Yang

DOI: https://doi.org/10.1109/group4.2014.6962041

2014-01-01

Abstract:We propose a 10 GHz OR/NOR directed logic device, which is consisted of two cascaded silicon microring resonators modulated through electric-field-induced carrier depletion in reverse biased PN junctions embedded in the ring waveguides.

What problem does this paper attempt to address?

High-Performance Electro-Optic Modulator on Silicon Nitride Platform with Heterogeneous Integration of Lithium Niobate

Ziliang Ruan,Kaixuan Chen,Zong Wang,Xuancong Fan,Ranfeng Gan,Lu Qi,Yiwei Xie,Changjian Guo,Zhonghua Yang,Naidi Cui,Liu Liu

DOI: https://doi.org/10.1002/lpor.202200327

2023-01-01

LASER & PHOTONICS REVIEWS

Abstract:Silicon nitride (SiN) emerges as an important platform for ultralow loss photonic integrations with complementary metal-oxide-semiconductor compatibility. However, active devices, such as modulators, are difficult to realize on pure SiN due to the lack of any electro-optic (EO) properties of the material. Here, an SiN and lithium niobate (LN) heterogenous integration platform supporting high-performance EO modulators on SiN waveguide circuits is introduced. An efficient evanescent coupling structure is realized for low-loss light transitions between the SiN waveguide and the LN ridge waveguide with a measured mode transition loss of only 0.4 dB. Based on this heterogeneous platform, an EO Mach-Zender interference modulator on SiN is built with unprecedented loss, efficiency, and bandwidth performances. A half-wave voltage of 4.3 V with a modulation bandwidth of 37 GHz and an overall insertion loss of 1 dB is measured for a 7-mm long device. Data transmission up to 128 Gb s(-1) with a bit-error-rate of <2.4 x 10(-4) is also demonstrated.
Electro‐Optic Modulators: On‐Chip Dual Electro‐Optic and Optoelectric Modulation Based on ZnO Nanowire‐Coated Photonic Crystal Nanocavity (advanced Optical Materials 17/2018)

Jingya Xie,Xiaoyong Hu,Chong Li,Feifan Wang,Peizhen Xu,Limin Tong,Hong Yang,Qihuang Gong

DOI: https://doi.org/10.1002/adom.201870069

IF: 9

2018-01-01

Advanced Optical Materials

Abstract:On-chip electro-optic and optoelectric dual modulation is realized by Xiaoyong Hu and coworkers (article number 1800374) using a ZnO nanowire covered photonic-crystal nanocavity. A weak 0.4-microwatt signal light induces large modulation-depth of 60% in the electric signal, while a small gate voltage of 1.5 Volt induces large modulation-depth of 75% for the signal light. This paves the way for achieving on-chip photon–electric signal interconversion, and multifunctional optoelectronic integrated devices.
Optoelectronic Oscillator Based on a Silicon Microring Modulator

Xiang Li,Jia Xu Brian Sia,Jiawei Wang,Zhongliang Qiao,Wanjun Wang,Xin Guo,Hong Wang,Chongyang Liu

DOI: https://doi.org/10.1063/5.0213446

IF: 4

2024-01-01

Applied Physics Letters

Abstract:An optoelectronic oscillator (OEO) system is built up with a high-speed silicon microring modulator. The modulator is based on a p-n doped ring resonator with a radius of 10 μm. Its electro-optic (EO) 3 dB bandwidth is ∼31.7 GHz, which makes it suitable for generating multi-GHz radio frequency signals. By using this modulator, one of the essential components of an OEO, the EO converter, has been dramatically miniaturized. At the same time, assisted by the ring resonator, the phase noise of the generated 10 GHz signal (nearly −90 dBc/Hz at 10 kHz offset) is not compromised compared to other integrated OEOs with mm footprint modulators. This is an important step toward a compact, scalable, and fully integrated silicon photonics-based OEO system together with our existing integrated light sources and photodetectors.
Ultra-High Dynamic Extinction Ratio Electro-Optical Modulator with Coupled Microring on SOI Platform

Zhuo Cheng,Bigeng Chen,Chunlei Sun,Maoliang Wei,Shaoliang Yu,Lan Li,Hongtao Lin,Yunjiang Rao

DOI: https://doi.org/10.1109/acp55869.2022.10089079

2022-01-01

Abstract:A 5 th -order coupled microring electro-optical modulator with PIN structures is proposed and experimentally demonstrated on SOI integrated photonics platform. Ultra-high dynamic extinction ratio (ER) up to 60 dB is achieved benefiting from the high-order optical band-pass filter design. The device size on chip is only 400×220 μm 2 including electrodes and the driving voltage is 2.1 V corresponding to 0.23 W power consumption. Such integrated modulators would be promising in building compact and low-power distributed optical fiber sensing systems using low-background-noise optical pulses.
All-optical logic OR and AND gates for NRZ-OOK signals based on four-wave mixing in a silicon waveguide

peiran hu,yanqiao xie,xiaoyan wang,qiang yan,shiming gao

DOI: https://doi.org/10.1142/S0218863514500301

2014-01-01

Journal of Nonlinear Optical Physics & Materials

Abstract:In this paper, we report a scheme to achieve an all-optical multiple-function logic unit including OR and AND gates for 10Gb/s nonreturn-to-zero on-off-keying (NRZ-OOK) signals based on four-wave mixing in a silicon waveguide. The functions of the logic OR and AND gates are demonstrated simultaneously using 10-bit OOK sequences. The eye diagrams of the OR and AND signals are realized experimentally as the incident signals are both modulated by OOK sequences originating from 2(31)-1 pseudorandom binary sequences.
Electro-optical Logic Gates Based on Graphene–silicon Waveguides

Weiwei Chen,Longzhi Yang,Pengjun Wang,Yawei Zhang,Liqiang Zhou,Tianjun Yang,Yang Wang,Jianyi Yang

DOI: https://doi.org/10.1016/j.optcom.2016.04.008

IF: 2.4

2016-01-01

Optics Communications

Abstract:In this paper, designs of electro-optical AND/NAND, OR/ NOR, XOR/XNOR logic gates based on cascaded silicon graphene switches and regular 2×1 multimode interference combiners are presented. Each switch consists of a Mach–Zehnder interferometer in which silicon slot waveguides embedded with graphene flakes are designed for phase shifters. High-speed switching function is achieved by applying an electrical signal to tune the Fermi levels of graphene flakes causing the variation of modal effective index. Calculation results show the crosstalk in the proposed optical switch is lower than −22.9dB within a bandwidth from 1510nm to 1600nm. The designed six electro-optical logic gates with the operation speed of 10Gbit/s have a minimum extinction ratio of 35.6dB and a maximum insertion loss of 0.21dB for transverse electric modes at 1.55μm.
High-speed silicon modulator based on cascaded microring resonators.

Yingtao Hu,Xi Xiao,Hao Xu,Xianyao Li,Kang Xiong,Zhiyong Li,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1364/OE.20.015079

IF: 3.8

2012-01-01

Optics Express

Abstract:A high-speed silicon modulator based on cascaded double microring resonators is demonstrated in this paper. The proposed modulator experimentally achieved 40 Gbit/s modulation with an extinction ratio of 3.9 dB. Enhancement of the modulator achieves with an ultra-high optical bandwidth of 0.41 nm, corresponding to 51 GHz, was accomplished by using cascaded double ring structure. The described modulator can provides an ultra-high-speed optical modulation with a further improvement in electrical bandwidth of the device. (c) 2012 Optical Society of America
Experimental Demonstration of an Optical Feynman Gate Using Cascaded Silicon Microring Resonator

Changhui Hong,Dejun Kong,Ruolan Yu,Jian Ding,Weiwei Chen,Pengjun Wang,Shixun Dai,Jun Li,Yan Li,Qiang Fu,Tingge Dai,Hui Yu,Jianyi Yang

DOI: https://doi.org/10.1016/j.optcom.2022.128759

IF: 2.4

2022-01-01

Optics Communications

Abstract:In this paper, a novel design of an optical Feynman gate is proposed and investigated. The proposed device consists of two cascaded silicon microring resonators using rib waveguides. By thermally tuning the two silicon microring resonators, the corresponding logic operations can be well performed. To verify the feasibility of the design, the proposed optical Feynman gate is experimentally demonstrated on a silicon-on-insulator wafer by using the commercial CMOS-compatible technology. Experimental results reveal that, at an operating wavelength of 1549.6 nm, the measured extinction ratio changes from 12.88 to 17.16 dB and the corresponding crosstalk ranges from -18.94 to -17.10 dB. The measured dynamic response times are 6.91 mu s and 15.68 mu s for the rising and falling edges, respectively.
Silicon-based CMOS Photonic Devices Using Carrier Dispersion Effect

赵勇,江晓清,杨建义,王明华

2009-01-01

Abstract:In order to realize the practical application of the Silicon-based optoelectronic devices, the progress and characteristics of Silicon-based CMOS photonic devices using carrier dispersion effect with structures of P-I-N, Bipolar Mode Field Effect Transistor(BMFET), Metal Oxide Semiconductor(MOS) and PN junction are reviewed. And our work in design and fabrication of Silicon-based CMOS photonic devices is reported. The devices fabricated by commercial CMOS process have expected results. The extinction ratios of an optical modulator, a 1 × 2 optical switch and a ring resonator are about 18 dB, 21 dB and 8~12 dB, respectively. The introduction of CMOS technology to the design and fabrication of Silicon-based photonic devices will make integrated optics be on a new level.
High-speed silicon microring modulator at 2-um waveband

Weihong Shen,Gangqiang Zhou,Jiangbing Du,Linjie Zhou,Ke Xu,Zuyuan He

DOI: https://doi.org/10.48550/arXiv.2104.01163

2021-03-12

Applied Physics

Abstract:We demonstrated a silicon integrated microring modulator working at the 2-um waveband with an L-shaped PN junction. 15-GHz 3-dB electro-optic bandwidth and <1 Vcm modulation efficiency for 45-Gbps NRZ-OOK signaling is achieved at 1960 nm.
Silicon Micro-Cavities And Their System Applications

Min Qiu,Qiang Li,Ziyang Zhang,Fangfei Liu,Qingjiang Chang,Yikai Su

DOI: https://doi.org/10.1117/12.813540

2009-01-01

Abstract:We experimentally demonstrate resonance-splitting and enhanced notch as a result of the mutual mode coupling in silicon ring resonator. Dense wavelength conversions, wavelength multicasting and optical up-converter are demonstrated in the split silicon ring resonator. A temporal differentiator and format conversion from NRZ to AMI are demonstrated utilizing the filtering effect of ring resonator. Photonic phase shifter and delay line are demonstrated utilizing the phase shift of ring resonator.
Optical Ring-Resonator Modulator Based on 0.8 Μm CMOS Technology

Wang Fan,Qiu Chen,Xiao Si-Miao,Hao Yin-Lei,Jiang Xiao-Qing,Wang Ming-Hua,Yang Jian-Yi

DOI: https://doi.org/10.1088/0256-307x/26/10/104206

2009-01-01

Chinese Physics Letters

Abstract:Optical ring-resonator-based modulators are fabricated on the silicon-on-insulator material through the mature commercial 0.8 mu m complementary metal oxide semiconductor foundry. The device configuration is based on a single ring resonator coupled to one bus waveguide. The waveguide widths are about 1 mu m. The p-i-n junctions are employed to inject currents. The experimental result shows that the ring resonators with the quality factor of above 40000 are obtained. The maximum extinction ratio of the modulators is larger than 10dB. The speed is tens of nanoseconds, and the corresponding injected current is smaller than 10 mA.
High-speed Silicon Modulators for the 2 Μm Wavelength Band

Wei Cao,David Hagan,David J. Thomson,Milos Nedeljkovic,Callum G. Littlejohns,Andy Knights,Shaif-Ul Alam,Junjia Wang,Frederic Gardes,Weiwei Zhang,Shenghao Liu,Ke Li,Mohamed Said Rouifed,Guo Xin,Wanjun Wang,Hong Wang,Graham T. Reed,Goran Z. Mashanovich

DOI: https://doi.org/10.1364/optica.5.001055

IF: 10.4

2018-01-01

Optica

Abstract:The 2 mu m wavelength band has become a promising candidate to be the next communication window. We demonstrate high-speed modulators based on a 220 nm silicon-on-insulator platform working at a wavelength of 1950 nm, using the free carrier plasma dispersion effect in silicon. A Mach-Zehnder interferometer modulator and a microring modulator have been characterized. At 1950 nm, the carrier-depletion modulator operates at a data rate of 20 Gbit/s with an extinction ratio of 5.8 dB and insertion loss of 13 dB. The modulation efficiency (V-pi (.) L-pi) is 2.68 V(.)cm at 4 V reverse bias. The device operation is broadband, and we also characterize its performance at 1550 nm. At 1550 nm, an open eye is obtained at 30 Gbit/s. The difference in bandwidth is caused by the bandwidth limit of the 2 mu m measurement setup. We also show a ring modulator paired with a low power integrated driver working in hybrid carrier depletion and injection mode at a data rate of 3 Gbit/s with power consumption of 2.38 pJ/bit in the 2 mu m wavelength range. This work is a proof of principle demonstration and paves a route toward a full silicon-based transceiver in the 2 mu m window. Published by The Optical Society under the terms of the Creative Commons Attribution 4.0 License.
Analysis of Electrooptic Modulator With 1-D Slotted Photonic Crystal Nanobeam Cavity

Biao Qi,Ping Yu.,Yubo Li,Xiaoqing Jiang,Mei Yang,Jianyi Yang

DOI: https://doi.org/10.1109/LPT.2011.2148704

2011-01-01

Abstract:A new nanocavity-based electrooptic modulator on silicon-on-insulator is proposed. This nanocavity is formed by a one-dimensional photonic crystal nanobeam cavity with a slot embedded. The slot lies in both the cavity and the distributed Bragg reflectors region. This results in an ultrasmall modal volume of 0.047 (λ/n)3 and a high Q-factor of 8.6×104. Another advantage of the structure is that polymers can be infiltrated into the slot. Accordingly, we rely on the fast and strong electrooptic effect of polymers, rather than on the free-carrier plasma dispersion effect of silicon. Analysis shows a modulator with a bandwidth of 86 GHz, a switching voltage of 0.2 V, and a length of only 14 μm can be obtained.
Silicon-on-insulator Electro-Optically Tunable Microring Resonators with Gear-Shaped P-I-n Diodes

Hong Wei,Sheng Chuanxiang,Chen Qian

DOI: https://doi.org/10.1117/12.970538

2012-01-01

Abstract:In this paper, a novel electron node for microring is analyzed based on plasma dispersion modulation effect. The gearshaped double-sector electron node is designed for microring embedded with resonator disks (MERD). Silvaco, twodimensional (2-D) semiconductor device simulator, has been used to analyze the relationship between concentration changes of free hole (electron) and output voltage. The optical investigation was carried out by CMT tools, giving rise to a complete evaluation of the electro-optically properties for our device. We simulate three positions of the MERD cross section with two dopant concentrations. The results show that spacing between electron nodes has important impact to resonator frequency shift. Fixing the concentrations of P and N at 1e20/cm3, the resonator frequency shift can be reached to 0.09nm when the spacing between electron nodes is 2 µm.
Ultra-compact Silicon Nanophotonic Modulator with Broadband Response

Volker J. Sorger,Norberto D. Lanzillotti-Kimura,Ren-Min Ma,Xiang Zhang

DOI: https://doi.org/10.1515/nanoph-2012-0009

IF: 7.5

2012-01-01

Nanophotonics

Abstract:Abstract Electro-optic modulators have been identified as the key drivers for optical communication and signal processing. With an ongoing miniaturization of photonic circuitries, an outstanding aim is to demonstrate an on-chip, ultra-compact, electro-optic modulator without sacrificing bandwidth and modulation strength. While silicon-based electro-optic modulators have been demonstrated, they require large device footprints of the order of millimeters as a result of weak non-linear electro-optical properties. The modulation strength can be increased by deploying a high-Q resonator, however with the trade-off of significantly sacrificing bandwidth. Furthermore, design challenges and temperature tuning limit the deployment of such resonance-based modulators. Recently, novel materials like graphene have been investigated for electro-optic modulation applications with a 0.1 dB per micrometer modulation strength, while showing an improvement over pure silicon devices, this design still requires device lengths of tens of micrometers due to the inefficient overlap between the thin graphene layer, and the optical mode of the silicon waveguide. Here we experimentally demonstrate an ultra-compact, silicon-based, electro-optic modulator with a record-high 1 dB per micrometer extinction ratio over a wide bandwidth range of 1 μm in ambient conditions. The device is based on a plasmonic metal-oxide-semiconductor (MOS) waveguide, which efficiently concentrates the optical modes’ electric field into a nanometer thin region comprised of an absorption coefficient-tuneable indium-tin-oxide (ITO) layer. The modulation mechanism originates from electrically changing the free carrier concentration of the ITO layer which dramatically increases the loss of this MOS mode. The seamless integration of such a strong optical beam modulation into an existing silicon-on-insulator platform bears significant potential towards broadband, compact and efficient communication links and circuits.
Development and analysis of all-optical multipurpose OR, XOR, NAND, AND, NOR, and XNOR logic gates in a single unit using silicon microring resonator

Manjur Hossain,S. Mahaboob Basha,V. Nagaraju,Kalimuddin Mondal,Jayanta Kumar Rakshit

DOI: https://doi.org/10.1007/s11082-024-06592-4

IF: 3

2024-03-28

Optical and Quantum Electronics

Abstract:There is a rising demand for low-cost, high-information-capacity optical signal processing. The number of devices is limited of performing different Boolean functions using a single unit. In the current manuscript, six basic logic gates, including OR, XOR, NAND, AND, NOR, and XNOR, are implemented in a single unit utilizing all-optical silicon microring resonator. At first, three microring resonators are used to get the AND, XOR and NOR logic functions. Then, beam combiners are used to get the OR, NAND and XNOR functions from AND, XOR, and NOR functions. In MATLAB, the suggested design is numerically simulated to verify the functions at an operational speed of nearly 260 Gbps. The required pump power for switching is only 1.95 mW for microring resonator based switch which is very less comparatively. Also, some performance parameters like "extinction ratio", "contrast ratio", "amplitude modulation", "on–off ratio", and "quality factor" are evaluated. To design the circuit practically, optimized parameters of the circuits have been selected. The obtained values of "extinction ratio" and "contrast ratio" are 14.97 dB and 19.03 dB, respectively. The value of AM is 0.17 dB which is less than 1 dB. The on–off ratio of the MRR is 35.10 dB which is much higher than expected.

engineering, electrical & electronic,optics,quantum science & technology
Silicon nitride electric-field poled microresonator modulator

Boris Zabelich,Christian Lafforgue,Edgars Nitiss,Anton Stroganov,Camille-Sophie Brès

DOI: https://doi.org/10.1063/5.0173507

IF: 5.6

2024-01-01

APL Photonics

Abstract:Stoichiometric silicon nitride is a highly regarded platform for its favorable attributes, such as low propagation loss and compatibility with complementary metal-oxide-semiconductor technology, making it a prominent choice for various linear and nonlinear applications on a chip. However, due to its amorphous structure, silicon nitride lacks second-order nonlinearity; hence, the platform misses the key functionality of linear electro-optical modulation for photonic integrated circuits. Several approaches have been explored to address this problem, including integration with electro-optic active materials, piezoelectric tuning, and utilization of the thermo-optic effect. In this work, we demonstrate electro-optical modulation in a silicon nitride microring resonator enabled by electric-field poling, eliminating the complexities associated with material integration and providing data modulation speeds up to 75 Mb/s, currently only limited by the electrode design. With an estimated inscribed electric field of 100 V/μm, we achieve an effective second-order susceptibility of 0.45 pm/V. In addition, we derive and confirm the value of the material’s third-order susceptibility, which is responsible for the emergence of second-order nonlinearity. These findings broaden the functionality of silicon nitride as a platform for electro-optic modulation.

optics,physics, applied
A Silicon Nitride Microring Based High-Speed, Tuning-Efficient, Electro-Refractive Modulator

Venkata Sai Praneeth Karempudi,Ishan G Thakkar,Jeffrey Todd Hastings

DOI: https://doi.org/10.48550/arXiv.2212.06326

2022-12-13

Abstract:The use of the Silicon-on-Insulator (SOI) platform has been prominent for realizing CMOS-compatible, high-performance photonic integrated circuits (PICs). But in recent years, the silicon-nitride-on-silicon-dioxide (SiN-on-SiO$_2$) platform has garnered increasing interest as an alternative to the SOI platform for realizing high-performance PICs. This is because of its several beneficial properties over the SOI platform, such as low optical losses, high thermo-optic stability, broader wavelength transparency range, and high tolerance to fabrication-process variations. However, SiN-on-SiO$_2$ based active devices such as modulators are scarce and lack in desired performance, due to the absence of free-carrier based activity in the SiN material and the complexity of integrating other active materials with SiN-on-SiO$_2$ platform. This shortcoming hinders the SiN-on-SiO$_2$ platform for realizing active PICs. To address this shortcoming, we demonstrate a SiN-on-SiO$_2$ microring resonator (MRR) based active modulator in this article. Our designed MRR modulator employs an Indium-Tin-Oxide (ITO)-SiN-ITO thin-film stack, in which the ITO thin films act as the upper and lower claddings of the SiN MRR. The ITO-SiN-ITO thin-film stack leverages the free-carrier assisted, high-amplitude refractive index change in the ITO films to effect a large electro-refractive optical modulation in the device. Based on the electrostatic, transient, and finite difference time domain (FDTD) simulations, conducted using photonics foundry-validated tools, we show that our modulator achieves 280 pm/V resonance modulation efficiency, 67.8 GHz 3-dB modulation bandwidth, $\sim$19 nm free-spectral range (FSR), $\sim$0.23 dB insertion loss, and 10.31 dB extinction ratio for optical on-off-keying (OOK) modulation at 30 Gb/s.

Optics,Applied Physics
Enhanced Performance and Flexibility in Silicon Modulators Based on a Coupled-Ring-Resonator Structure

yunchu li,lin zhang,muping song,yang yue,raymond g beausoleil,alan e willner

DOI: https://doi.org/10.1109/OFC.2008.4528064

2008-01-01

Abstract:We propose a high-speed (up to 30 Gb/s) silicon-based coupled-ring modulator that requires small resonance shift and achieves high extinction ratio compared with conventional single ring modulator. Optimized chirp enables reach extension at 1 dB power penalty from 6 to 22 km for 20 Gb/s NRZ data transmission.

Electro-optic OR/NOR Directed Logic Device at 10 GHz Based on Carrier-Depletion Silicon Microring Resonators

High-Performance Electro-Optic Modulator on Silicon Nitride Platform with Heterogeneous Integration of Lithium Niobate

Electro‐Optic Modulators: On‐Chip Dual Electro‐Optic and Optoelectric Modulation Based on ZnO Nanowire‐Coated Photonic Crystal Nanocavity (advanced Optical Materials 17/2018)

Optoelectronic Oscillator Based on a Silicon Microring Modulator

Ultra-High Dynamic Extinction Ratio Electro-Optical Modulator with Coupled Microring on SOI Platform

All-optical logic OR and AND gates for NRZ-OOK signals based on four-wave mixing in a silicon waveguide

Electro-optical Logic Gates Based on Graphene–silicon Waveguides

High-speed silicon modulator based on cascaded microring resonators.

Experimental Demonstration of an Optical Feynman Gate Using Cascaded Silicon Microring Resonator

Silicon-based CMOS Photonic Devices Using Carrier Dispersion Effect

High-speed silicon microring modulator at 2-um waveband

Silicon Micro-Cavities And Their System Applications

Optical Ring-Resonator Modulator Based on 0.8 Μm CMOS Technology

High-speed Silicon Modulators for the 2 Μm Wavelength Band

Analysis of Electrooptic Modulator With 1-D Slotted Photonic Crystal Nanobeam Cavity

Silicon-on-insulator Electro-Optically Tunable Microring Resonators with Gear-Shaped P-I-n Diodes

Ultra-compact Silicon Nanophotonic Modulator with Broadband Response

Development and analysis of all-optical multipurpose OR, XOR, NAND, AND, NOR, and XNOR logic gates in a single unit using silicon microring resonator

Silicon nitride electric-field poled microresonator modulator

A Silicon Nitride Microring Based High-Speed, Tuning-Efficient, Electro-Refractive Modulator

Enhanced Performance and Flexibility in Silicon Modulators Based on a Coupled-Ring-Resonator Structure