Abstract:Resistive cross-point memory arrays can be used to construct high-density storage-class memory. However, coupled IR drop and sneak currents cause multidimensional non-uniformity of cell effective voltage in cross-point arrays. The voltage non-uniformity significantly degrades write performance on cross-point memory if only adopting the worst-case write latency at partial dimensions. Furthermore, the non-uniformity of cell effective voltage in cross-point arrays depends on multidimensional dynamic write operation parameters: row, column as well as layer address, the number of selected cells, and the number of half-selected low-resistance state cells. In this article, we aim to improve the write performance by leveraging multidimensional non-uniformity of cell effective voltage. First, we analyze the impact of multidimensional write parameters on effective voltage and write latency. Then, we design the memory array write scheme that measures the write parameters and sets the write latency accordingly. We further analyze the features and effects of interlayer sneak currents and extend the scheme to 3D cross-point memory. The evaluation shows that the proposed memory array write scheme can reduce the memory access latency by 75.6 and 64.1 percent, and improve the system performance by 4.5 times and 3.4 times on average, compared with the baseline and the state-of-the-art approach, respectively.

Write Disturb Analyses on Half-Selected Cells of Cross-Point RRAM Arrays

Disturbance Characteristics of Half-Selected Cells in a Cross-Point Resistive Switching Memory Array

Modeling and Simulation of an Improved Resistive Random Access Memory Array

Device and Circuit Interaction Analysis of Stochastic Behaviors in Cross-Point RRAM Arrays

Electrothermal Effects on Reliability of Vertical Resistive Random Access Memory Array by Parallel Computing

Parallel Simulation of Resistive Random Access Memory with Hexahedral Elements

Statistical assessment methodology for the design and optimization of cross-point RRAM arrays

Fully Coupled Electrothermal Simulation of Large RRAM Arrays in the “Thermal-House”

Parallel Modeling Fully Coupled Multiphysics Process in Resistive Random Access Memory Array

Fully Coupled Electrothermal Simulation of Resistive Random Access Memory (RRAM) Array

Signal Integrity Analysis for Resistive Random Access Memory Crossbar Array by Compact Model with Consideration of Electro-Thermal Coupling Effects

Towards high-speed, write-disturb tolerant 3D vertical RRAM arrays

RRAM Crossbar Array With Cell Selection Device: A Device and Circuit Interaction Study

Improving Write Performance on Cross-Point RRAM Arrays by Leveraging Multidimensional Non-Uniformity of Cell Effective Voltage

Impact of the Interconnection Structure on RRAM-Based Crossbar Array in Neuromorphic Chip

Impact of resistive switching parameters on resistive random access memory crossbar arrays

Multi-Bit Read and Write Methodologies for Diode-STTRAM Crossbar Array

3D Vertical Rram Architecture and Operation Algorithms with Effective Ir-Drop Suppressing and Anti-Disturbance

3-D Cross-Point Array Operation on -Based Vertical Resistive Switching Memory

Investigation of a New Disturb Effect in the Aggressively Scaled Dual-Bit/Cell Split-Gate Floating-Gate Flash Cell

Thermal Crosstalk in 3-Dimensional RRAM Crossbar Array