A zinc oxide-based threshold switching memristor for simulating synaptic plasticity and artificial nociceptor
Li Xiaoqi,Jiang Jianbo,Liu Guangyu,Zhou Bao,Zhao Enming
DOI: https://doi.org/10.1007/s10854-024-13373-y
2024-08-23
Journal of Materials Science Materials in Electronics
Abstract:With the advancement of artificial intelligence technology, memristors show great potential in serving as artificial synapses to imitate diverse biological learning behaviors. In this study, we present the implementation of an artificial nociceptor using a threshold switching memristor device based on zinc oxide. The memristor device with threshold switching demonstrates volatile resistance switching properties, offering an on/off ratio of 10 5 . This feature enables the emulation of learning patterns observed in biological synapses. The synaptic plasticity of the Al/ZnO/FTO memristor encompasses spike rate-dependent plasticity, paired-pulse facilitation, spike timing-dependent plasticity, and long-term potentiation/depression. In addition, the threshold switching memristor consisting of Al/ZnO/FTO has a similar function to that of a nociceptor, which is a specialized receptor found in sensory neurons responsible for detecting harmful stimuli and transmitting signals to the central nervous system for protective measures. The device demonstrates several important characteristics resembling nociceptors, such as the occurrence of threshold, relaxation, and sensitization phenomena associated with allodynia and hyperalgesia. These responses are influenced by factors, such as the intensity, duration, and frequency of the external stimuli. This study demonstrates the potential use of this device in alarm systems for humanoid robots, specifically designed to enhance their artificial sensory capabilities.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied