Analog Resistive Switching and Artificial Synaptic Behavior of ITO/WOX/TaN Memristors

Youngboo Cho,Jihyung Kim,Myounggon Kang,Sungjun Kim
DOI: https://doi.org/10.3390/ma16041687
IF: 3.4
2023-02-18
Materials
Abstract:In this work, we fabricated an ITO/WOX/TaN memristor device by reactive sputtering to investigate resistive switching and conduct analog resistive switching to implement artificial synaptic devices. The device showed good pulse endurance (104 cycles), a high on/off ratio (>10), and long retention (>104 s) at room temperature. The conduction mechanism could be explained by Schottky emission conduction. Further, the resistive switching characteristics were performed by additional pulse-signal-based experiments for more practical operation. Lastly, the potentiation/depression characteristics were examined for 10 cycles. The results thus indicate that the WOX-based devices are appropriate candidates for synaptic devices as well as next-generation nonvolatile memory.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
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