Abstract:We perform a comprehensive first-principles study of the electronic properties of phosphorene nanoribbons, phosphorus nanotubes, multilayer phosphorene sheets, and heterobilayers of phosphorene and two-dimensional (2D) transition-metal dichalcogenide (TMDC) monolayer. The tensile strain and electric-field effects on electronic properties of low-dimensional phosphorene nanostructures are also investigated. Our calculations show that the bare zigzag phosphorene nanoribbons (z-PNRs) are metals regardless of the ribbon width, whereas the bare armchair phosphorene nanoribbons (a-PNRs) are semiconductors with indirect bandgaps and the bandgaps decrease with increasing ribbon width. We find that compressive (or tensile) strains can reduce (or enlarge) the bandgap of the bare a-PNRs while an in-plane electric field can significantly reduce the bandgap of the bare a-PNRs, leading to the semiconductor-to-metal transition beyond certain electric field. For edge-passivated PNR by hydrogen, z-PNRs become semiconductor with nearly direct bandgaps and a-PNRs are still semiconductor but with direct bandgaps. The response to tensile strain and electric field for the edge-passivated PNRs is similar to that for the edge-unpassivated (bare) a-PNRs. For single-walled phosphorus nanotubes, both armchair and zigzag nanotubes are semiconductors with direct bandgaps. With either tensile strains or transverse electric field, behavior of bandgap modulation similar to that for a-PNRs can arise. It is known that multilayer phosphorene sheets are semiconductors whose bandgaps decrease with an increase in the number of multilayers. In the presence of a vertical electric field, the bandgaps of multilayer phosphorene sheets decrease with increasing electric field and the bandgap modulation is more significant with more layers. Lastly, heterobilayers of phosphorene (p-type) with an n-type TMDC (MoS2 or WS2) monolayer are still semiconductors while their bandgaps can be reduced by applying a vertical electric field as well. We also show that the combined phosphorene/MoS2 heterolayers can be an effective solar cell material. Our estimated power conversion efficiency for the phosphorene/MoS2 heterobilayer has a theoretical maximum value of 17.5%.

Raman Spectra of Few-Layer Phosphorene Studied from First-Principles Calculations

Extraordinary Photoluminescence and Strong Temperature/Angle-Dependent Raman Responses in Few-Layer Phosphorene

Direct Observation of the Layer-Dependent Electronic Structure in Phosphorene.

Lattice Vibrational Modes and Raman Scattering Spectra of Strained Phosphorene

Unusual Scaling Laws of the Band Gap and Optical Absorption of Phosphorene Nanoribbons

Analysis of Single- and Multi-layer Phosphorene Nanoribbons Behavior under Modulated Electric Fields Using Tight-Binding and Green’s Function Formalism

Layer-dependent Electronic Properties of Phosphorene-Like Materials and Phosphorene-Based Van Der Waals Heterostructures.

Layer-dependent Band Alignment and Work Function of Few-Layer Phosphorene

From Black Phosphorus to Phosphorene: Basic Solvent Exfoliation, Evolution of Raman Scattering, and Applications to Ultrafast Photonics

Optical absorption properties of few-layer phosphorene

The Phosphorene Under The External Electronic Field And Strain

Phosphorene: Synthesis, Scale-Up, and Quantitative Optical Spectroscopy

Raman Spectroscopy Studies of Black Phosphorus.

Raman spectroscopy of the interlayer shear mode in few-layer MoS2 flakes

Structural, Elastic, Electronic, and Optical Properties of the Tricycle-Like Phosphorene

Gate tunable quantum oscillations in air-stable and high mobility few-layer phosphorene heterostructures

The optical conductivity of few-layer black phosphorus by infrared spectroscopy

Phosphorene Nanoribbons, Phosphorus Nanotubes, and van der Waals Multilayers

Second-Order Raman Scattering in Exfoliated Black Phosphorus

Thickness and electric-field-dependent polarizability and dielectric constant in phosphorene

Dirac spectrum in gated multilayer black phosphorus nanoribbons