Equilibrium Chemical Vapor Deposition Growth of Bernal-stacked Bilayer Graphene.

Pei Zhao,Sungjin Kim,Xiao Chen,Erik Einarsson,Miao Wang,Yenan Song,Hongtao Wang,Shohei Chiashi,Rong Xiang,Shigeo Maruyama
DOI: https://doi.org/10.1021/nn5049188
IF: 17.1
2014-01-01
ACS Nano
Abstract:Using ethanol as the carbon source, self-limiting growth of AB-stacked bilayer graphene (BLG) has been achieved on Cu via an equilibrium chemical vapor deposition (CVD) process. We found that during this alcohol catalytic CVD (ACCVD) a source-gas pressure range exists to break the self-limitation of monolayer graphene on Cu, and at a certain equilibrium state it prefers to form uniform BLG with a high surface coverage of ∼94% and AB-stacking ratio of nearly 100%. More importantly, once the BLG is completed, this growth shows a self-limiting manner, and an extended ethanol flow time does not result in additional layers. We investigate the mechanism of this equilibrium BLG growth using isotopically labeled (13)C-ethanol and selective surface aryl functionalization, and results reveal that during the equilibrium ACCVD process a continuous substitution of graphene flakes occurs to the as-formed graphene and the BLG growth follows a layer-by-layer epitaxy mechanism. These phenomena are significantly in contrast to those observed for previously reported BLG growth using methane as precursor.
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