Horizontal transfer of aligned Si nanowire arrays and their photoconductive performance

Dalin Zhang,Gong Cheng,Jianquan Wang,Chunqian Zhang,Zhi Liu,Yuhua Zuo,Jun Zheng,Chunlai Xue,Chuanbo Li,Buwen Cheng,Qiming Wang
DOI: https://doi.org/10.1186/1556-276X-9-661
2014-01-01
Nanoscale Research Letters
Abstract:An easy and low-cost method to transfer large-scale horizontally aligned Si nanowires onto a substrate is reported. Si nanowires prepared by metal-assisted chemical etching were assembled and anchored to fabricate multiwire photoconductive devices with standard Si technology. Scanning electron microscopy images showed highly aligned and successfully anchored Si nanowires. Current-voltage tests showed an approximately twofold change in conductivity between the devices in dark and under laser irradiation. Fully reversible light switching ON/OFF response was also achieved with an I ON / I OFF ratio of 230. Dynamic response measurement showed a fast switching feature with response and recovery times of 10.96 and 19.26 ms, respectively.
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