High-performance, All-Solution-processed Organic Nanowire Transistor Arrays with Inkjet-Printing Patterned Electrodes.

Nanliu Liu,Yan Zhou,Na Ai,Chan Luo,Junbiao Peng,Jian Wang,Jian Pei,Yong Cao
DOI: https://doi.org/10.1021/la2033324
IF: 3.9
2011-01-01
Langmuir
Abstract:Organic nanowire (NW) transistor arrays with a mobility of as high as 1.26 cm(2)·V(-1)·S(-1) are fabricated by combining the dip-coating process to align the NW into arrays with the inkjet printing process to pattern the source/drain electrodes. A narrow gap of ~20 μm has been obtained by modifying the inkjet process. The all-solution process is proven to be a low-cost, high-yield, simple approach to fabricating high-performance organic NW transistor arrays over a large area.
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