Abstract:The polarization discontinuity across interfaces in polar nitride-based heterostructures can lead to the formation of two-dimensional electron and hole gases. In the past, the observation of these electron and hole gases has been achieved through various experimental techniques, most often by electronic measurements but occasionally by optical means. However, the occurrence of a two-dimensional hole gas has never been demonstrated optically. The objective of this article is to demonstrate, thanks to the combination of various optical spectroscopy techniques coupled to numerical simulations, the presence of a two-dimensional hole gas in a GaN/AlGaN/GaN heterostructure. This is made possible thanks to a GaN/AlGaN/GaN heterostructure displaying a micrometer-thick AlGaN layer and a GaN cap thicker than in conventional GaN-based HEMTs structures. The band structure across the whole heterostructure was established by solving self-consistently the Schrödinger and Poisson equations and by taking into account the experimentally determined strain state of each layer. Continuous and quasi-continuos photoluminescence reveal the presence of a broad emission band at an energy around 50 meV below the exciton emission and whose energy blueshifts with increasing excitation power density, until it is completely quenched due to the complete screening of the internal electric field. Time-resolved measurements show that the emission arising from the two-dimensional hole gas can be assigned to the recombination of holes in the potential well with electrons located in the top GaN as well as electron from the bottom AlGaN, each of them displaying different decay times due to unequal electric fields. Besides the optical demonstration of a two-dimensional hole gas in a nitride-based heterostructure, our work highlights the optical recombination processes involved in the emission from such a hole gas.

Demonstration of GaN∕AlGaN Heterojunction for Dual Band Detection

UV/Near-IR dual band photodetector based on p-GaN/α-In2Se3 heterojunction

Demonstration of a monocrystalline GaAs-$β$-Ga$_2$O$_3$ p-n heterojunction

Si/AlN p-n heterojunction interfaced with ultrathin SiO2

Si/AlN p-n heterojunction interfaced with ultrathin SiO 2

Dual-band photodetector based on mixed-dimensional WSe2/GaN junction

Initial demonstration of AlGaAs-GaAsP-beta-Ga2O3 n-p-n double heterojunctions

Polarization Assisted Interdigital AlGaN/GaN Heterostructure Ultraviolet Photodetectors

Analysis of electronic structure and properties of Ga2O3/CuAlO2 heterojunction

Photoresponse Study of Visible Blind GaN/AlGaN P-I-n Ultraviolet Photodetector

Influence of Algan/Gan Interface Polarization Fields on the Properties of Photoconductive Detectors

Monolayer graphene/GaN heterostructure photodetector with UV-IR dual-wavelength photoresponses

The performance of ultraviolet solar-blind detection of p-Si/n-Ga2O3 heterojunctions with/without hole-blocking layer

Ga 2 O 3 /GaN Heterostructural Ultraviolet Photodetectors with Exciton-Dominated Ultranarrow Response

The Optical Properties of AlGaN/GaN P-I-n Structure

Quantum state engineering with ultra-short-period (AlN)m/(GaN)n superlattices for narrowband deep-ultraviolet detection.

Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate

High-responsivity Dual-Band Ultraviolet Photodetector Based on Ga2O3/GaN Heterostructure.

Experimental demonstration of a Two-Dimensional Hole Gas (2DHG) in a GaN/AlGaN/GaN based heterostructure by optical spectroscopy

Band Alignment of AlN/β-Ga2O3 Heterojunction Interface Measured by X-Ray Photoelectron Spectroscopy

AlGaN/GaN heterostructure on Si (111) substrate grown by MOCVD