Demonstration of GaN∕AlGaN Heterojunction for Dual Band Detection

Shujie Jiao,Dongbo Wang,Fengyun Guo,Jinzhong Wang,Hongtao Li,Liancheng Zhao
DOI: https://doi.org/10.1063/1.3666300
2011-01-01
AIP Conference Proceedings
Abstract:A GaN/AlGaN heterojunction has been grown on c-plane sapphire substrate by metal organic chemical vapor deposition (MOCVD). Optical properties of this GaN/AlGaN heterojunction in ultraviolet and infrared regions are investigated. UV absorption is due to the band gap of GaN and AlGaN layer, and infrared absorption is attributed to the free carrier absorption.
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