Structure of oxygen-implanted layer on Ti prepared by plasma based ion implantation
Li Jin-long,Ma Xin-xin,Sun Ming-ren
DOI: https://doi.org/10.1007/s11771-007-0328-1
2007-01-01
Journal of Central South University of Technology
Abstract:Ti was modified by oxygen-plasma based ion implantation with the pulsed voltages of -10, -30 and -50 kV and a dose of 4.5 x 10(17) ion/cm(2). In order to maintain a lower implanting temperature, a oil cooling table was employed during implantation. X-ray photoelectron spectroscopy(XPS), Raman spectra, glancing angle X-ray diffraction (GXRD) and high resolution transmission electron microscopy (HRTEM) were used to characterize the structure of the oxygen-implanted layer. Oxygen implantation produces a thick layer of titanium oxide, and its thickness increases with the increase of voltage. In the surface, the oxygen concentration is the highest, and then an oxygen concentration plateau (here the oxygen concentration is 60%-70%, mole fraction) appears along depth direction, and moreover, this plateau broadens with the increase of voltage. Implanted samples have a modified layer with a similar layered structure, in which a thin contamination layer locates in the surface followed by a TiO2 layer, and then a transition layer consisting of TiO2, Ti2O3, TiO and Ti. In the transition layer, the fitting analysis result of Ti2p and O1s reveals TiO2 is predominant, and the O1s fitting results are more precise to identify oxide content than that of Ti2p. The implanting voltage of -50 kV can produce the rutile, with a size about 30 nm, and rutile amount increases with the increase of dose. Furthermore, both lattice and edge dislocations are found in rutile.