New Stannite-Like P-Type Thermoelectric Material Cu3sbse4

Chongyin Yang,Fuqiang Huang,Liming Wu,Ke Xu
DOI: https://doi.org/10.1088/0022-3727/44/29/295404
2011-01-01
Abstract:The ternary chalcogenide of Cu3SbSe4 is demonstrated to be a novel p-type thermoelectric material, by doping Sn in the Sb site. The figure of merit (ZT) in Cu3Sb0.975Sn0.025Se4 reaches 0.75 at 673 K. Such excellent thermoelectric properties are attributed to the crystal structure of Cu3SbSe4, consisting of the three-dimensional Cu/Se framework ((3)(infinity) [Cu3Se4]) acting as the hole conduction pathway and the [SbSe4] tetrahedra. The Cu/Se framework is suitable to tune the electrical conductivity by doping. The insertion of tetrahedral [SbSe4] causes a more distorted diamond-like structure, providing a relatively lower lattice thermal conductivity and a relatively large Seebeck coefficient. The origin of the structure-electrical property relationship and ZT enhancement by Sn doping is elucidated.
What problem does this paper attempt to address?