Abstract:The active-matrix organic light-emitting diode (AMOLED) is an energy efficient display technology due to its nonvolatility. However, the complex circuit structure obstructs its performance improvement. Here, ferroelectric field effect transistors (FeFETs) consisting of a BiFeO 3 (BFO) ferroelectric gate layer, a ZnO semiconductor channel layer, and a La 0.6 Sr 0.4 MnO 3 bottom-gate electrode were fabricated. A large OFF/ON resistance ratio ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\sim {4}\times {10}^{{3}}$ </tex-math></inline-formula> ) was obtained, and the carrier accumulation or depletion at the ZnO/BFO interface owing to the ferroelectric field effect was confirmed by Hall measurements. Based on the high performance ZnO-based FeFET, a simplified AMOLED pixel circuit was designed and experimentally verified. The estimated aperture ratio was improved greatly from 28% to 37%. Furthermore, the operation speed of the FeFET could be as fast as 5 ns. These findings are of great significance in developing high performance AMOLED display devices.

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