Research of Tm (5.5 at %), Ho (0.55 at %):GdVO 4 laser pumped by diode laser at 800 nm

Y. L. Ju,H. D. He,G. L. Zhu,B. Q. Yao,Y. Z. Wang
DOI: https://doi.org/10.1134/S1054660X11210092
IF: 1.2
2011-01-01
Laser Physics
Abstract:In this paper, we report a Tm (5.5 at %), Ho (0.55 at %):GdVO 4 laser pumped by diode laser at 800 nm. To our best knowledge, it is the first time that the use of Tm (5.5 at %), Ho (0.55 at %):GdVO 4 crystal among the similar experiments. We observed the influences of LD working temperature i.e. pump wavelength to 2 μm laser conversion efficiency. In the conditions of the continuous wave and 10 kHz acousto-optic Q-switch, high efficiency output of 2.05 μm laser was obtained. With the maximum pump power of 34.6, 13.9, and 13.6 W at 2.05 μm laser output was achieved respectively. Single laser pulse width was 25.6 ns in 10 kHz acousto-optic Q-switched condition.
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