Abstract:High-quality multicrystalline Upgraded Metallurgical Grade Silicon (UMG-Si) offers significant advantages over conventional polysilicon-based PV technology, associated to lower cost, lower energy budget and lower carbon footprint. The aim of this study is twofold: on the one hand, to ascertain the efficiency potential of solar cells based on this material in terms of carrier lifetime; and on the other hand, to explore, as a result of that, the adoption of high-efficiency cell architectures by establishing an effective rear-side passivation scheme for the implementation of passivated emitter rear contact (PERC) devices. The carrier lifetime and the surface passivation efficacy are investigated for different passivating layer configurations after single and double P-diffusion gettering processes. Layer stacks consisting of Al2O3, SiOxNy and a-SiNx:H capping overlayers have been optimized, on industrial size, saw-damage-etched UMG wafers and results compared to those obtained using reference iodine-ethanol (IE) passivation. Diagnosis based on minority carrier lifetime and implied Voc (iVoc) measurements helped monitor the impact of parameter optimization on wafer quality, particularly after firing processes. Carrier lifetimes over 600 us at 10^15 cm-3 injection level as well as up to 790 us locally have been measured in UMG-Si wafers passivated with IE after a Phosphorus Diffusion Gettering (PDG), demonstrating the suitability of the material for high-efficiency cell architectures. Values higher than 300 us have been obtained with Al2O3-based passivation layers for gettered UMG wafers, with implied Voc values up to 710 mV. These record-breaking lifetimes and iVoc figures obtained with p-type multicrystalline UMG-Si material demonstrate a significant upgrading of its electronic quality by means of industry-scalable technical processes.

Properties of Multicrystalline Silicon Wafers Based on UMG Material

The characterization of high quality multicrystalline silicon by the electron beam induced current method

The dislocation distribution characteristics of a multi-crystalline silicon ingot and its impact on the cell efficiency

EFFECT OF VARIABLE TEMPERATURE PHOSPHOROUS GETTERING TREATMENTS ON THE PERFORMANCE OF MULTICRYSTALLINE SILICON

Effects of impurities and defects on the distribution of minority carrier lifetime in multi-crystalline silicon

Aluminum Gettering in Photovoltaic Silicon

Electron-beam-induced Current Study of Grain Boundaries in Multicrystalline Si

THE IMPACT OF IMPURITIES ON MINORITY CARRIER LIFETIME OF MULTICRYSTALLINE SILICON

Reduction of trapping and recombination in upgraded metallurgical grade silicon: Impact of phosphorous diffusion gettering

Electron-beam-induced current study of hydrogen passivation on grain boundaries in multicrystalline silicon: Influence of GB character and impurity contamination

High carrier lifetimes in UMG multicrystalline wafers after P- diffusion compatible with high-efficiency cell structures

Bulk carrier lifetime surpassing 600 us in Upgraded Metallurgical-grade Silicon multicrystalline wafers after Phosphorus Diffusion Gettering

Comparison on Mechanical Properties of Heavily Phosphorus- and Arsenic-Doped Czochralski Silicon Wafers

Influence of gettering and passivation on uniformity of the electrical parameters in monolithic multicrystalline silicon solar cell

Grain Boundary Engineering of High Performance Multicrystalline Silicon: Control of Iron Contamination at the Ingot Edge

Influence of Defects and Impurities on the Deteriorated Border Region in Multicrystalline Silicon Ingots

(Invited) Defects in Cast-Mono Crystalline Silicon

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Oxygen and Carbon Precipitation in Multicrystalline Solar Silicon

Effect of Cooling Rate during Thermal Processes on the Electrical Properties of Cast Multi-Crystalline Silicon

Carrier Recombination Activities and Structural Properties of Small-Angle Boundaries in Multicrystalline Silicon