Abstract:Thermal characterization of high-speed switching power transistors, such as high electron mobility transistors (HEMT), is critical for the evaluation of their performance as well as their long-term reliability. Unlike IR thermal imaging, thermoreflectance thermal imaging (TRI) uses LED lights in the visible range and therefore can be used to measure thermal response of these nanoscale devices under operating condition. However, TRI is also limited in terms of spatial resolution by optical diffraction as we reach device sizes on the order of hundreds of nanometer. We carried out a series of thermoreflectance thermal imaging experiments on the metal heater lines with widths ranging from 100 nm to 1 μm fabricated on InGaAs semiconductor film. Analytical and finite element numerical modeling are used to compare experimental data with theoretical temperature profiles. We demonstrate that thermoreflectance thermal imaging is capable of detecting temperature rise in devices with sub-diffraction feature sizes. We show that optical diffraction leads to underestimation of the magnitude of small scale hot spots. We also present a combined analytical-numerical model to reproduce the experimental results, and finally propose an approach that can be utilized to compensate for this diffraction artifact and acquire the correct temperature response from thermoreflectance thermal imaging results.

Extraction Of Non-Thermal Thz Emission From A High Electron Mobility Transistor

Extraction of Terahertz Emission from a Grating-Coupled High-Electron-mobility Transistor

A Terahertz Detector Based on Algan/Gan High Electron Mobility Transistor with Bowtie Antennas

Extraction of the electron excess temperature in terahertz quantum cascade lasers from laser characteristics

Sub-diffraction Limit Thermal Imaging for HEMT Devices

High intensity study of THz detectors based on field effect transistors

Thermodynamic bounds of work and efficiency in near-field thermoradiative systems

Efficient Extraction of High Power THz Radiation Generated by an Ultra-Relativistic Electron Beam in a Dielectric Loaded Waveguide

Electronic-Spintronic Terahertz Emitter

The Operation Cutoff Frequency of High Electron Mobility Transistor Measured by Terahertz Method

High sensitivity HgTe room temperature terahertz photodetector

Enhancing far-field thermal emission with thermal extraction.

Performance Evaluation of Tunneling Field Effect Transistor on Terahertz Detection

Passive Terahertz Imaging Detectors Based on Antenna-Coupled High-Electron-mobility Transistors.

TCAD Simulation for Nonresonant Terahertz Detector Based on Double-Channel GaN/AlGaN High-Electron-Mobility Transistor

Detection of Incoherent Terahertz Light Using Antenna-Coupled High-Electron-Mobility Field-Effect Transistors

Performance Analysis of Photon-Enhanced Thermionic Emission Systems Mediated by Quantum Tunneling

Numerical Study on Heterodyne Terahertz Detection in Field Effect Transistor

The role of electron viscosity on plasma-wave instability in HEMTs

Efficient hot-electron extraction in two-dimensional semiconductor heterostructures by ultrafast resonant transfer

Investigation of the influence mechanism of hypersonic flow field environment on thermionic emission efficiency