Extraction of Terahertz Emission from a Grating-Coupled High-Electron-mobility Transistor

Zhou Yu,Li Xinxing,Tan Renbing,Xue Wei,Huang Yongdan,Lou Shitao,Zhang Baoshun,Qin Hua
DOI: https://doi.org/10.1088/1674-4926/34/2/022002
2013-01-01
Abstract:In a grating-coupled high-electron-mobility transistor,weak terahertz emission with wavelength around 400μm was observed by using a Fourier-transform spectrometer.The absolute terahertz emission power was extracted from a strong background blackbody emission by using a modulation technique.The power of terahertz emission is proportional to the drain-source current,while the power of blackbody emission has a distinct relation with the electrical power.The dependence on the drain-source bias and the gate voltage suggests that the terahertz emission is induced by accelerated electrons interacting with the grating.
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