Abstract:To provide a basis for optimum choice of a SIS mixer for ALMA Band-10 (787-950 GHz), numerical simulations on performance of receiver are made using properties of both SIS junction and possible design of its tuning/coupling circuit. "Traditional" Nb-AlOX-Nb and epitaxial NbN-AlN-NbN junctions are studied being integrated with either NbN(NbTiN)/Al or all-epitaxial NbN circuit. Calculations are based on Tucker's theory using 3-port approximation. The extra noise associated with MAR effect in NbN junctions is taken into account. Numerical simulations are finally fitted to best experimental data demonstrating good agreement. I. INTRODUCTION The Band-10 (787-950 GHz) is the most difficult band of the whole ALMA project. This is not only due to small mechanical tolerances allowed at these high frequencies. The essential part of difficulties is originated from limited choice of conductors to be used in the tuning circuit of the Band-10 SIS mixer along with lacking of well-established processing for a number of available materials. For example, such popular material as Nb is good for producing suitable SIS junctions, but it cannot be used efficiently as a part of their tuning circuit for Band-10. This situation suggests more difficult process of implementation of Nb-based SIS trilayer into a waveguiding sandwich made from low-loss normal metals or from higher-Tc superconductors (NbN, NbTiN). However, the use of mentioned higher-Tc superconductors for wiring of Nb trilayer was not successful since now; the wiring has to be made from relatively lossy normal metals (Al, Au). The epitaxial NbN structures fabricated at NiCT (Japan) are a good exception (1). The NbN epitaxial films can be treated as perfect conductors with magnetic penetration depth that is quite similar to performance of Nb films below 700 GHz. The fully epitaxial SIS junction (ex. NbN/AlN/NbN) has advantages of higher gap energy and lower RF loss in electrodes. The higher gap voltage allows for higher frequency limit (up to 2 THz) yet for better response, dIIF/dVRF, of the mixer at about 1 THz, if compare with all-Nb devices. However, two serious drawbacks are known for epitaxial NbN SIS junctions: i) lower than for Nb quality of IV-curve and ii) extra noise associated with multiple Andreev reflection (MAR) (2, 3). The primary goal of this paper is to analyze numerically a few most promising configuration of terahertz-band SIS mixers in respect to available experimental data. The calculations are based on Tucker's theory, which simplest 3- port approximation, according to M. Feldman, fits the terahertz-range SIS mixers (4, 5). Authors hope that this work can facilitate the hard choice of a mixer for ALMA Band-10. II. MODELING OF IV-CURVES AND TUNING CIRCUIT To calculate performance of a real SIS mixer, an appropriate model of its IV-curves is necessary. This model will be then input in most of equations of Tucker's theory on quantum mixing with SIS junctions (4). We have synthesized IV-curves of Nb junctions using a sum of exponential functions with adjustable parameters. All functions are smooth and can be treated as a basic functions.

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