Abstract:Transparent conductive Al-doped ZnO (AZO) and Si-codoped AZO (AZO: Si) films were deposited on square quartz substrates by radio frequency (RF) magnetron sputtering. The effect of distance between the substrate and target (D-st) and the effect of co-doping Si on the electrical and optical properties of the AZO films were systematically investigated. The resistivity, carrier concentration, and mobility were found to be strongly dependent on the D-st values. With a decrease in D-st, the carrier concentration and mobility increased significantly, which resulted in improved conductivity. The lowest resistivity of 4.94x10(-4) Omega.cm was obtained at a D-st of 4.5 cm, and this was associated with a carrier concentration of 3.75 x 10(20) cm(-3) and a mobility of 33.7 cm2 . V-1 . s(-1). X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) spectroscopy, and grain boundary scattering models were used to analyze the relationship between the carrier concentration and the mobility at different deposition (D-st) values. Transmittance spectra showed an average transmittance of >93% in the visible-near infrared range for all the samples and a blue shift of the absorption edge with a decrease in D-st. AZO:Si films had high-conductance and high-transmittance optical properties compared with AZO films, and they had better resistivity stability than the AZO films when exposed to a hot and damp atmosphere, which is practically meaningful.

Effects of Substrate-Target Distance and Si Co-Doping on the Properties of Al-Doped Zno Films Deposited by Magnetron Sputtering

Deposition and Characterization of AZO Thin Films on Flexible Glass Substrates Using DC Magnetron Sputtering Technique

Effect of Magnesium Doping on the Light-Induced Hydrophilicity of Zno Thin Films

Effects of Al Doping on the Properties of ZnO Thin Films Deposited by Atomic Layer Deposition

Microstructure and Electrical Properties of Al-doped ZnO Thin Films

Influence of Al Doping on the Properties of Zno Thin Films Grown by Atomic Layer Deposition

Micrographs and Optical Properties of Al-Doped Zno Thin Films Deposited by Radio Frequency Magnetron Sputtering

Effect of Si substrate orientation on morphology and electrical properties of ZnO : Al films

Effects of deposition power and pressure on the crystallinity of Al-doped ZnO thin films at glass substrates by low temperature RF magnetron sputtering

Study on the preparation and the film-forming properties of Mo-and Al-doped ZnO ceramic targets

Effect of sputtering power on the microstructure and photelectric properties of Al doped ZnO thin films

Optical and Electrical Properties of Al-doped ZnO Thin Films by Atomic Layer Deposition

Semiconducting properties of Al doped ZnO thin films

Effects of electron doping on the d0 magnetism in N-implanted ZnO and ZnAlO films

Study on Aluminum Concentration on Optical and Electrical Properties of AZO Thin Films Fabricated by Ultrasonic Spray Pyrolysis

Microstructure and optical properties of ZnAlO films prepared by Magnetron sputtering

Electrical and Magnetic Properties of (al, Co) Co-Doped ZnO Films Deposited by RF Magnetron Sputtering

Investigation of Structural, Electrical, and Optical Properties for Al-Doped ZnO Films Deposited at Different Substrate Temperatures and H2Ratios

Radio frequency magnetron sputtering deposition of low-resistivity and broad-spectral transmission F and Al co-doped ZnO film with mobility exceeding 50 cm2 V−1 s−1

The Effect of Mg and Al Co-Doping on the Structural and Photoelectric Properties of ZnO Thin Film

Al-Doped Zno Thin Films Deposited by Reactive Frequency Magnetron Sputtering: H-2-Induced Property Changes