Abstract:Ionic transport and electrochemical reactions underpin the functionality of the memory devices. NiO, as a promising transition metal oxide for developing resistive switching random access memory, has been extensively explored in the terms of the resistive switching. However, there is limited experimental evidence to visualize the ionic processes of the NiO under the external electrical field. In addition, the correlation between the ionic processes and the resistive switching has not been established. To close this gap and also to determine the role of the ionic processes in resistive switching of the NiO, in this study, a series of scanning probe microscopy techniques, including electrochemical strain microscopy (ESM), conductive atomic force microscopy, Kelvin probe force microscopy, and a newly developed first-order reversal curve-IV, are employed to measure the ESM response, the resistive switching performance, the work function, and the ionic dynamics of NiO, respectively. The results in this work have clearly visualized the ionic transport and electrochemical reactions of NiO when subjected to the electrical field. It has been found that the ionic processes and the resistive switching accompanied each other. Furthermore, it is found that the electrochemical reactions play a determinative role in the resistive switching of the NiO, and this electrochemically induced resistive switching performance can be explained by an integrated mechanism that has combined the filamentary and the interfacial effects underlying resistive switching. In addition to providing a better understanding of the resistive switching of NiO, this work also provides effective methods to probe the ionic processes and to correlate these ionic processes to the performance of functional materials.

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