Learning with Resistive Switching Neural Networks

Mingyi Rao,Zhongrui Wang,Can Li,Hao Jiang,Rivu Midya,Peng Lin,Daniel Belkin,Wenhao Song,Shiva Asapu,Qiangfei Xia,J. Joshua Yang
DOI: https://doi.org/10.1109/iedm19573.2019.8993465
2019-01-01
Abstract:With the slowdown of Moore's law and the intensification of memory wall as well as von-Neumann bottleneck, processing-in-memory with emerging non-volatile analog devices, such as RRAMs or memristors, is a potential solution to accelerate machine learning in hardware neural networks, which may drastically improve the energy-area efficiency. In this paper, we discuss three major types of learning, namely the supervised, reinforcement, and unsupervised learning that are implemented with various 1-transistor-1-memristor (1T1R) based neural networks.
What problem does this paper attempt to address?