Study on the effect of heat-annealing and irradiation on spectroscopic properties of Bi:αBaB2O4 single crystal

Lihe Zheng
DOI: https://doi.org/10.1364/OE.18.003385
IF: 3.8
2010-01-01
Optics Express
Abstract:The absorption, excitation, and ultrabroadband near-infrared luminescence spectra of Bismuth were investigated in H-2-annealed and gamma-irradiated Bi:alpha-BaB2O4(alpha-BBO) single crystals, respectively. Energy-level diagrams of the near-infrared luminescent centers were fixed. The electronic transition energies of near-infrared active centers are basically consistent with the multiplets of free Bi+ ions. The minor difference of the energy-level diagrams of Bi+ ions in H-2-annealed and.-irradiated Bi:alpha-BaB2O4 crystals can be ascribed to the difference of the local lattice environments. The involved physical and chemical processes were discussed. The effect of Ar-, air-annealing and electron-irradiation on Bi:alpha BaB2O4 crystal were also investigated. (C) 2010 Optical Society of America
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