Abstract:Light emission from semiconductors depends not only on the efficiency of carrier injection and recombination but also extraction efficiency. For ultraviolet emission from high band gap materials such as ZnO, nanowires have higher extraction efficiencies than thin films, but conventional approaches for creating a p-n diode result in low efficiency. We exploited the noncentral symmetric nature of n-type ZnO nanowire/p-type GaN substrate to create a piezoelectric ! potential within the nanowire by applying stress. Because of the polarization of ions in a crystal that has noncentral symmetry, a piezoelectric potential (piezopotential) is created in the crystal under stress. The piezopotential acts as a "gate" voltage to tune the charge transport and enhance carrier injection, which is called the piezo-phototronic effect. We propose that band modification traps free carriers at the interface region in a channel created by the local piezoelectric charges. The emission intensity and injection current at a fixed applied voltage have been enhanced by a factor of 17 and 4, respectively, after applying a 0.093% compressive strain and improved conversion efficiency by a factor of 4.25. This huge enhanced performance is suggested arising from an effective increase in the local "biased voltage" as a result of the band modification caused by piezopotential and the trapping of holes at the interface region in a channel created by the local piezoelectric charges near the interface. Our study can be extended from ultraviolet range to visible range for a variety of optoelectronic devices that are important for today's safe, green, and renewable energy technology.

Localized Ultraviolet Photoresponse in Single Bent ZnO Micro/nanowires

Enhancing Sensitivity of A Single Zno Micro-/Nanowire Photodetector by Piezo-Phototronic Effect

Improvement of ultraviolet photoresponse of bent ZnO microwires by coupling piezoelectric and surface oxygen adsorption/desorption effects.

Enhancing Light Emission of Zno Microwire-Based Diodes by Piezo-Phototronic Effect

Photoconducting Response on Bending of Individual ZnO Nanowires

Non-aligned ZnO Nanowires Composited with Reduced Graphene Oxide and Single-Walled Carbon Nanotubes for Highly Responsive UV–visible Photodetectors

Localized suppression of longitudinal-optical-phonon–exciton coupling in bent ZnO nanowires

Uniaxial tensile strain and exciton–phonon coupling in bent ZnO nanowires

In Situ Probing Electrical Response on Bending of ZnO Nanowires Inside Transmission Electron Microscope

Electronic and Mechanical Coupling in Bent ZnO Nanowires

Piezo-phototronic UV Photosensing with ZnO Nanowires Array

Influence of Exciton Localization on the Emission and Ultraviolet Photoresponse of ZnO/ZnS Core-Shell Nanowires.

The Coupling Influence of UV Illumination and Strain on the Surface Potential Distribution of a Single ZnO Micro/nano Wire

Statistically Analyzed Photoresponse of Elastically Bent CdS Nanowires Probed by Light-Compatible in Situ High-Resolution TEM

Strain Gradient Induced Spatially Indirect Excitons in Single Crystalline ZnO Nanowires

The Piezotronic Effect of Zinc Oxide Nanowires Studied by in Situ TEM

Probing the Strain Effect on Near Band Edge Emission of a Curved ZnO Nanowire Via Spatially Resolved Cathodoluminescence

Opto-mechano-electrical Tripling in ZnO Nanowires Probed by Photocurrent Spectroscopy in a High-Resolution Transmission Electron Microscope

Strain Induced Exciton Fine-Structure Splitting and Shift in Bent ZnO Microwires

Strain Loading Mode Dependent Bandgap Deformation Potential in ZnO Micro-/Nanowires.

Piezo-Phototronic Effect Enhanced Visible and Ultraviolet Photodetection Using A Zno-Cds Core-Shell Micro/Nanowire