Abstract:Here we report the fabrication of high-performance ultraviolet photodetectors based on a heterojunction device structure in which ZnO quantum dots were used to decorate Zn2SnO4 nanowires. Systematic investigations have shown their ultrahigh light-to-dark current ratio (up to 6.8 × 104), specific detectivity (up to 9.0 × 1017 Jones), photoconductive gain (up to 1.1 × 107), fast response, and excellent stability. Compared with a pristine Zn2SnO4 nanowire, a quantum dot decorated nanowire demonstrated about 10 times higher photocurrent and responsivity. Device physics modeling showed that their high performance originates from the rational energy band engineering, which allows efficient separation of electron-hole pairs at the interfaces between ZnO quantum dots and a Zn2SnO4 nanowire. As a result of band engineering, holes migrate to ZnO quantum dots, which increases electron concentration and lifetime in the nanowire conduction channel, leading to significantly improved photoresponse. The enhancement mechanism found in this work can also be used to guide the design of high-performance photodetectors based on other nanomaterials. Furthermore, flexible ultraviolet photodetectors were fabricated and integrated into a 10 × 10 device array, which constitutes a high-performance flexible ultraviolet image sensor. These intriguing results suggest that the band alignment engineering on nanowires can be rationally achieved using compound semiconductor quantum dots. This can lead to largely improved device performance. Particularly for ZnO quantum dot decorated Zn2SnO4 nanowires, these decorated nanowires may find broad applications in future flexible and wearable electronics.

Influence of Exciton Localization on the Emission and Ultraviolet Photoresponse of ZnO/ZnS Core-Shell Nanowires.

Investigation of Localized and Delocalized Excitons in ZnO/ZnS Core-Shell Heterostructured Nanowires

Cathodoluminescence and its mapping of flower-like ZnO, ZnO/ZnS core–shell and tube-like ZnS nanostructures

Localized-State-Dependent Electroluminescence from ZnO/ZnS Core–Shell Nanowires–GaN Heterojunction

Construction of Fes2-Sensitized Zno@Zns Nanorod Arrays with Enhanced Optical and Photoresponse Performances

Ultraviolet Electroluminescence from ZnS@ZnO Core-ShellNanowires/p-GaN Introduced by Exciton Localization

The effects of shell characteristics on the UV photoresponse behaviors of photoconductivity based on ZnO/ZnMgO core–shell nanowire arrays

Single-Crystal ZnO/AlN Core/Shell Nanowires for Ultraviolet Emission and Dual-Color Ultraviolet Photodetection

Extended Photoresponse and Multi-Band Luminescence of ZnO/ZnSe Core/shell Nanorods

Photoluminescence enhancement of ZnO nanowire arrays by atomic layer deposition of ZrO2 layers and thermal annealing.

Enhanced ultraviolet emission from ZnS-coated ZnO nanowires fabricated by self-assembling method

Optical and Excitonic Properties of Crystalline ZnS Nanowires: Toward Efficient Ultraviolet Emission at Room Temperature

Ultraviolet Light-Enhanced Field Electron Emission of Zinc Oxide Nanowires

Room Temperature Ultraviolet Stimulated Emission of ZnO Nanocrystals

Piezo-Phototronic Effect Enhanced Visible and Ultraviolet Photodetection Using A Zno-Cds Core-Shell Micro/Nanowire

Extended Photoresponse of Zno/Cds Core/Shell Nanorods to Solar Radiation and Related Mechanisms

High-performance UV photodetection of unique ZnO nanowires from zinc carbonate hydroxide nanobelts.

Origin of luminescence from ZnO/CdS core/shell nanowire arrays

ZnO Quantum Dot Decorated Zn2SnO4 Nanowire Heterojunction Photodetectors with Drastic Performance Enhancement and Flexible Ultraviolet Image Sensors.

Highly sensitive ultraviolet photodetectors based on ZnO/SnO2 core-shell nanorod arrays

Photoluminescence and highly selective photoresponse of ZnO nanorod arrays