Influence Of Nitrogen On The Defects And Magnetism Of Zno:N Thin Films

Keyue Wu,QingQing Fang,WeiNa Wang,Chang Zhou,Wenjuan Huang,JinGuang Li,QingRong Lv,Yanmei Liu,QiPing Zhang,HanMing Zhang

DOI: https://doi.org/10.1063/1.3468690

IF: 2.877

2010-01-01

Journal of Applied Physics

Abstract:Nitrogen (N)-doped ZnO thin films have been deposited on Si (100) substrates by pulsed laser deposition under different N-2 pressures. The optical and magnetic properties of N-doped ZnO films have been studied with photoluminescence, Raman spectroscopy, and vibrating sample magnetometer. Photoluminescence and Raman studies reveal that N-2 pressure affected the defects of N-doped ZnO films. Under 10 Pa N-2 pressure, N substitutes O and forms N-O acceptor. Zn interstitials are main compensating donors. Under higher N-2 pressures, N not only substitutes O but also forms N2O molecules in N-doped ZnO films. Zn antisizes are compensating donors. In additional, Zn vacancies are formed and the concentration increases with increasing N-2 pressure. Magnetic properties of these films show that there are two distinct ferromagnetic mechanisms: the origin of ferromagnetism in the ZnO:N-10 Pa film is Zn interstitial, while Zn vacancy leads to ferromagnetism in the ZnO:N-50 Pa film. (c) 2010 American Institute of Physics. [doi:10.1063/1.3468690]