Abstract:As one type of associative memory, content-addressable memory (CAM) has become a critical component in several applications, including caches, routers, and pattern matching. Compared with the conventional CAM that could only deliver a “matched or not-matched” result, emerging multilevel CAM (ML-CAM) is capable of delivering “the degree of match” with multilevel distance calculation. This feature has been desired in applications that need beyond-Boolean matching results. However, existing ML-CAM designs are limited by the bit-cell device discharging current mismatch and vulnerability to the timing of sensing operations for distance calculation. This inherent constraint makes it difficult to further improve the accuracy and scalability toward higher accuracy and higher dimension matching. In this work, we propose CapCAM, a multilevel Capacitive Content Addressable Memory. It could be implemented based on either static random-access memory (SRAM) or emerging technologies, e.g., the ferroelectric field-effect transistor (FeFET). CapCAM could provide linear and stable voltage drop scaled by the match degree and need no strict timing for result sensing, which embraces the high-accuracy and high-scalability search. The inherent enabler of CapCAM is the charge-domain computing mechanism. This article will present the basic concept, operating mechanisms, detailed circuit designs, and circuit-level simulations of CapCAM. Besides, we apply CapCAM to few-shot learning applications and compare CapCAM with the current-domain TCAM designs. Results show 99.2% accuracy for a five-way five-shot classification task with our proposed CapCAM design while considering 1-fF capacitors, 20-domain FeFETs, and 256 columns. In contrast, the prior work based on discharging dynamics requires strict timing controls and suffers from accuracy degradation under the same configuration, which demonstrates CapCAM’s capability of low-power, accurate, and scalable multilevel CAM (ML-CAM) computing.

Reducing Vulnerability to Soft Errors in Sub-100 Nm Content Addressable Memory Circuits

Design of Ultracompact Content Addressable Memory Exploiting 1T-1MTJ Cell

A Scalable Design of Multi-Bit Ferroelectric Content Addressable Memory for Data-Centric Computing

A Scalable 2T-1Fefet Based Content Addressable Memory Design for Energy Efficient Data Search

A Novel Soft Error Immunity SRAM Cell

Characterizing Soft Error Vulnerability of Cache Coherence Protocols for Chip-Multiprocessors

A Range Matching CAM for Hierarchical Defect Tolerance Technique in NRAM Structures

Self-Adaptive Data Caches for Soft-Error Reliability

A Hybrid Technique Based on ECC and Hardened Cells for Tolerating Random Multiple-Bit Upsets in SRAM Arrays

On the Characterization and Optimization of On-Chip Cache Reliability Against Soft Errors

Variability-Aware Design of RRAM-Based Analog CAMs

Zero-Hardened SRAM Cells to Improve Soft Error Tolerance in FPGA

An on-chip ECC circuit for correcting soft errors in DRAMs with trench capacitors

Feedback-Based Low-Power Soft-Error-Tolerant Design for Dual-Modular Redundancy.

An Adaptive Read Control Voltage Scheme for Reliability Enhancement of Flash-Based In-Memory Computing Architecture for Neural Network

An ultra-high-density and energy-efficient content addressable memory design based on 3D-NAND flash

A Multi-objective Optimization Framework to Design Soft-Error-Immune Circuit

Addressing multiple bit/symbol errors in DRAM subsystem

CapCAM: A Multilevel Capacitive Content Addressable Memory for High-Accuracy and High-Scalability Search and Compute Applications

ETCIM: an Error-Tolerant Digital-CIM Processor with Redundancy-Free Repair and Run-Time MAC and Cell Error Correction

A Hardware-Software Collaborated Method for Soft-Error Tolerant MPSoC