Polaron Effects of Exciton in ZnSe/ZnS Parabolic Quantum Wells

元丽华,安张辉,张材荣,陈玉红,王道斌
2010-01-01
Chinese Journal of Luminescence
Abstract:ZnSe-related quantum well structures have attracted much interest with regard to their optoelectronic application. They have large optical nonlinearity due to the large exciton binding energy compared with the Ⅲ-Ⅴ compound semiconductors. The ZnSe/ZnS quantum well structure is a promising material for fabricating laser diodes since they have a direct band gap with wide band gap energy up to 3.75 eV at room temperature. The purpose of the present work is to investigate the polaron effects of the exciton in the ZnSe/ZnS parabolic quantum well (PQW). We assume the trial function has a simple form with the variables describing the motion within the quantum well plane separated from those describing the motion along the growth axis. The interaction of the charged particles with bulk longitudinal optical (LO) phonons is considered only, and the energy of the system is obtained by using a variational method developed by Lee, Low and Pines. The results showed that the ground state energy and the binding energy of the exciton with LO-phonon decrease rapidly with increasing the well width L at the beginning, then decreases very slowly with increasing L. In contrast to our previous work, it can be found that the exciton in the ZnSe/ZnS PQWs is more strongly bound than that in the GaAs/Ga(subscript 1-x)Al(subscript x)As PQWs.
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