Abstract:The optical dielectric function of ZnGeN$_2$ is calculated from the interband transitions using the energy bands calculated in the quasiparticle self-consistent (QS)$G\hat W$ method using two different levels of approximation: the independent particle approximation (IPA) and the Bethe-Salpeter Equation (BSE) approach. The first allows us to relate peaks in $\varepsilon_2(\omega)$ to specific bands and {\bf k}-points but does not include excitonic effects, while the latter does. The corresponding changes in the shape of $\varepsilon_2(\omega)$ are found to be similar to those in GaN. The screened Coulomb interaction $\hat W$ is here calculated including electron-hole interactions in the polarization function and gives a band structure already going beyond the random phase approximation. The static dielectric constants including only electronic screening, commonly referred to as $\varepsilon^\infty$, were calculated separately by extrapolating the wave vector dependent macroscopic $\varepsilon_M({\bf q},\omega=0)$ for ${\bf q}\rightarrow0$. Below the quasiparticle gap, we find three bound excitons optically active for different polarization. The convergence of these bound excitons with respect to the density of the {\bf k}-mesh used in the BSE is studied and found to require a fine mesh. It is also found that these bound excitons originate from only the lowest conduction band and the top three valence bands. To incorporate the lattice screening, we include a scaling factor $(\varepsilon^\infty/\varepsilon^0)^2$, which allows us to obtain exciton binding energies of the correct order of magnitude similar to those in GaN. The excitons are related to each of the three fold split valence bands and the splittings of the latter are also studied as function of strain. Finally, a relation between the anisotropic effective masses and the valence band splitting is pointed out and explained.

Quasiparticle Effects on the Linear and Nonlinear Susceptibility of ZnGeP2

Quasiparticle Band Structures And Optical Properties Of Monolayer Zrnx (X=Cl, Br, I) Under Exciton Effect

First-Principles Study on Linear and Nonlinear Optical Properties of Zngep2

Polaron Effects of Exciton in ZnSe/ZnS Parabolic Quantum Wells

Assignment of Infrared Absorption Bands in ZnGeP2

Research Progress of Point Defects Effects on Optical Properties of ZnGeP_2 Crystals

Developments of Point Defects in ZnGeP<SUB>2</SUB> Crystals: Developments of Point Defects in ZnGeP<SUB>2</SUB> Crystals

Developments of Point Defects in ZnGeP_2 Crystals

Infrared Absorption Bands Associated with Native Defects in Zngep2

The Effect of Excited-State Absorption-Induced Thermal Refraction on the Optical Nonlinear Refraction of ZnPc/DMSO Solution

Comparison of interband related optical transitions and excitons in ZnGeN$_2$ and GaN

Influence of annealing on optical and electrical properties of ZnGeP2 single crystals

Study on annealing of infrared nonlinear optical crystal ZnGeP2

Development of New Middle and Far Infrared Nonlinear Optical Crystals ZnGeP2

Vertical Gradient Freeze Growth of ZnGeP2 Crystals for Nonlinear Optical Applications

Theoretical studies on third-order nonlinear optical property

Effective Electro-Optic Coefficient of (1-X)pb(zn1/3nb2/3)o3-xpbtio3 Single Crystals

Composition Dependence of Dispersion and Bandgap Properties in PZN-xPT Single Crystals

Defect Physics of Ternary Semiconductor Zn Ge P 2 with a High Density of Anion-Cation Antisites: A First-Principles Study

Defect Physics of Ternary Semiconductor ZnGeP2 with a High Density of Anion-Cation Antisites: A First-Principles Study

Molecular Construction from AgGaS2 to CuZnPS4: Defect-Induced Second Harmonic Generation Enhancement and Cosubstitution-Driven Band Gap Enlargement