Abstract:The gas phase reaction thermodynamics in the chemical vapor deposition (CVD) process of preparing boron carbides via the precursors of BCl 3– C 3 H 6(propene)– H 2 is investigated with a set of 325 gaseous species, in which the data for 135 species are evaluated in this work. The thermochemistry data are calculated with accurate model chemistry at G3(MP2) and G3//B3LYP levels. The concentration distribution of all of the 325 species is obtained with the principle of chemical equilibrium. The thermochemistry data include the heat capacities, entropies, enthalpies of formation, and Gibbs free energies of formation. The heat capacities and entropies at temperatures in 298.15–2000 K are evaluated with the standard statistical thermodynamics. The Gibbs free energies of formation in 298.15–2000 K are calculated with the classical thermodynamics based on the developed heat capacities and entropies. By including the crystal B 4 C , C (graphite), and B , the results for an example of the 3:1:2 precursors of BCl 3: C 3 H 6: H 2 show that the crystal B 4 C can be produced at temperatures higher than 700 K while the graphite has a higher molar value and can be produced at lower temperatures. It is also examined that the production of graphite can be controlled by changing the ratio of the injected reactants or pressure. It is interesting that BHCl 2, BCH 3 Cl 2, BH 2 Cl , and B 2 Cl 4 are found to be the most effective species in the CVD process, which is similar to those in the BCl 3– CH 4– H 2 system. The results predicted in this work are consistent with the experiments.

Effect Of Temperature Field On Deposition Of Boron Carbide Coating Form Bcl3-Ch4-H-2 System

Effect of deposition temperature on boron-doped carbon coatings deposited from a BCl3–C3H6–H2 mixture using low pressure chemical vapor deposition

Effects of heat treatment on the microstructure of amorphous boron carbide coating deposited on graphite substrates by chemical vapor deposition

Chemical Vapor Deposition of Boron‐Doped Carbon Coating from BCl3‐C3H6‐H2‐Ar Gas Mixture

Preparation of B-C system materials by CVD

Uniform design and regression analysis of LPCVD boron carbide from BCl3–CH4–H2 system

Analysis And Characterization Of Amorphous Boron Carbide Coatings Deposited From Bcl3-Ch4-H-2 Mixtures

Effect of C/B ratio in reactants on low-pressure CVD boron-doped carbon deposited from a BCl 3 –C 3 H 6 –H 2 mixture

Uniform Design and Regression Analysis of LPCVD Boron Carbide from BCl{sub 3}-Ch{sub 4}-H{sub 2} System

Microstructure and Deposition Mechanism of Cvd Amorphous Boron Carbide Coatings Deposited on Sic Substrates at Low Temperature

Thermodynamic Investigation of the Gas-Phase Reactions in the Chemical Vapor Deposition of Boron Carbide with BCl3–CH4–H2 Precursors

Effect of Dilution Gas Flow on Low Pressure CVD Boron-Doped Carbon Coatings

Investigation of Boron Nitride Prepared by Low Pressure Chemical Vapor Deposition at 650~1200 °C

Synthesis of boron carbide films by ion beam sputtering

Effect of deposition temperature on deposition kinetics and mechanism of silicon boron nitride coating deposited from SiCl 4 –BCl 3 –NH 3 –H 2 –Ar mixture using low pressure chemical vapor deposition

The Synthesis and Characterization of CVD ZrB2 Coating from ZrCl4-BCl3-H-2-Ar System

Effect of Deposition Temperature on Dynamics and Mechanism of Deposition for Si–B–C Ceramic from BCl3/SiCH3Cl3/H2 Precursor

PREPARATION AND CHARACTERIZATION OF BORON DOPED CARBON THIN FILM BY LOW PRESSURE CHEMICAL VAPOR DEPOSITION

HfB2 Coating on C/C Composites Prepared by Chemical Vapor Deposition: Thermodynamics and Experimental Investigation

REACTION THERMODYNAMICS IN CHEMICAL VAPOR DEPOSITION OF BORON CARBIDES WITH BCl3–C3H6 (PROPENE)-H2 PRECURSORS

Effect of Carbon Precursors on the Microstructure and Bonding State of A Boron-Carbon Compound Grown by Lpcvd