High-Sensitivity Photodetectors Based On Silver Nanowires/Silicon Nanopillar Arrays
Jijie Zhao,Huan Liu,Lier Deng,Yuxuan Du,Xingtian Yin,Jiuhong Wang,Fei Xie,Shuai Wen,Shengyong Wang,Weiguo Liu
DOI: https://doi.org/10.1109/jsen.2023.3286837
IF: 4.3
2023-01-01
IEEE Sensors Journal
Abstract:Light loss is one of the main factors affecting the quantum efficiency of photodetectors. Several approaches have been proposed to mitigate light loss and improve the quantum efficiency of silicon-based photodetectors. Here, we demonstrate high-sensitivity photodetectors based on highly antireflective silicon nanopillar arrays (Si-NPAs) as a light trapping layer combined with a thin film of silver nanowires (Ag-NWs) in a mesh configuration. This composite structure overcomes the weak light absorption and severe surface complexation of conventional silicon-based photodetectors. Introduction of Ag-NWs provides multiple transmission paths for electron transfer without affecting the photodetector light absorption, while the formation of Schottky junctions with Si-NPAs promotes photoelectric conversion. In addition, the effects of different concentrations of Ag-NWs films on the performance of Si-NPAs photodetectors are investigated. The proposed photodetector exhibits the best performance when the concentration of Ag-NWs is 6 mg/mL. At this optimized concentration of Ag-NWs, the external quantum efficiency (EQE) is 82.4% at 850 nm, which is $5.8\times $ higher than that of a single Si-NPAs photodetector. Furthermore, the network structure of Ag-NWs promotes the fast response of the device with a short rise/fall time of 80/ $72 \mu \text{s}$ , which is about half of the response time of a single Si-NPAs photodetector. The combination of Ag-NWs and silicon nanopillars has the potential to open up new possibilities for the development of highly sensitive photodetectors.
engineering, electrical & electronic,instruments & instrumentation,physics, applied