Composite structure of SiO2@AgNPs@p-SiNWs for enhanced broadband optical antireflection.

Ren Lu,Yewu Wang,Lin Gu,Wei Wang,Yanjun Fang,Jian Sha
DOI: https://doi.org/10.1364/OE.21.017484
IF: 3.8
2013-01-01
Optics Express
Abstract:The composite structure of SiO(2)@AgNPs@p-SiNWs based on silicon nanowires (SiNWs) produced by metal-assisted chemical etching (MaCE) method has been designed to realize the significant reflection suppression over a broad wavelength range (300 - 2500 nm). Especially, the reflectivity of the structure even below 0.3% at a wide range of 620 - 1950 nm can be achieved. It also has been demonstrated that SiO(2) capers play a dominant role in the significant reflection suppression of the composite structure.
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