Abstract:Dilute magnetic MnGe quantum dots (QDs) have been a popular research topic due to their great potential application on spintronics and their natural compatibility with today's highly developed silicon-based complementary metal oxide semiconductor (CMOS) technology. However, the relatively low Curie temperature impedes their ability to maintain the ferromagnetic phase and creates difficulty for their practical application in spintronics at room temperature. Here, we report the first preparation of the Te-doped dilute-magnetic Mn 0.064 Ge 0.895 Te 0.041 /Si QDs by using the ion beam composite target sputtering technique. Growth temperature and deposition thickness dependent QDs density and magnetic properties were investigated systematically. The experimental results indicate that the QD density of Mn 0.064 Ge 0.895 Te 0.041 /Si sample increases first and then reduces with the deposited thickness, while the QDs' diameters increase monotonously from 10.18±0.21 to 33.6±0.34 nm. Curie temperature of 369 K observed in Mn 0.064 Ge 0.895 Te 0.041 QDs is higher than that of 295 K observed in Mn 0.061 Ge 0.939 counterparts grown at the same conditions. Correspondingly, the saturation and residual magnetization in the former are much higher than in the latter. The ferromagnetic enhancement can be attributed to that the nonpolar Mn 0.064 Ge 0.936 QDs transform into Rashba polar Mn 0.064 Ge 0.895 Te 0.041 QDs with the doping of Te ions, which obviously promotes the exchange coupling between holes and Mn atoms. Our work provides a practical approach for improving the ferromagnetism and Curie temperature of silicon-based diluted magnetic semiconductor QDs.

Investigation of Diluted Magnetic Semiconductor and Nano Magnetic Material by Ion Beam Technology

Nano-clusters structure and magnetic properties of high fluence Mn+ ion-implanted GaN

Study on the Fabrication and Properties of GaN-Based Diluted Magnetic Semiconductors

Properties Comparison of Transition Elements and Rare-Earth Elements Doped GaN Based Diluted Magnetic Semiconductor

Studies on Structural and Magnetic Properties in Mn-Doped GaN

The Al Doping Effect on Epitaxial (In,Mn)As Dilute Magnetic Semiconductors Prepared by Ion Implantation and Pulsed Laser Melting

Experimental And Theoretical Investigations On Ferromagnetic Nature Of Mn-Doped Dilute Magnetic Semiconductors

Characterization and local magnetic modification of ion irradiated GaMnAs

Magnetic Mn-Doped Ge Nanostructures

Structural and Magnetic Properties of Co+ Implanted N-Gan Dilute Magnetic Semiconductors

Mn-Rich Nanostructures Inge1-Xmnx: Fabrication, Microstructure, and Magnetic Properties

Structure Dependence of Magnetic Properties for Annealed GaMnN Films Grown by MOCVD

Investigation of Mn-implanted n-Si by low-energy ion beam deposition

Tailoring the Magnetism of Gamnas Films by Ion Irradiation

Enhanced ferromagnetism and tunable saturation magnetization of Mn/C-codoped GaN nanostructures synthesized by carbothermal nitridation.

Influence of Si Co-Doping on Magnetic, Electrical and Optical Properties of Ga1–x Mn X N Film Grown by MOCVD

Te doping effects on the ferromagnetic performance of the MnGe/Si quantum dots grown by ion beam sputtering deposition

Ferromagnetic Properties And Structures Of The Mn-Implanted Gaas Semiconductor

Structural and magnetic characteristics of MnAs nanoclusters embedded in Be-doped GaAs

Quest for High-Curie Temperature MnxGe1−x Diluted Magnetic Semiconductors for Room-Temperature Spintronics Applications

Characterization of N-Gan Dilute Magnetic Semiconductors by Cobalt Ions Implantation at High-Fluence