Abstract:Binary data in 1T1C or 2T2C non-volatile ferroelectric random access memories, which are represented by the polarization charges of switching and non-switching events, are retrieved when a reading current pulse exceeds the sense amplifier threshold for discrimination of nonswitching pulses, and a reset pulse is required after the destructive readout. Downscaling the dimensions of such memory cells reduces the measurable polarization charge proportional to the capacitor area, and data are no longer detected reliably in high-density memories. The nondestructive readout of the binary information is possible from the high- and low-conductance bipolar switching of a ferroelectric diode under two opposite poling fields, where the direction of the diode effect switches with polarization reversal. Our study of BiFeO3 thin-film capacitors shows measured polarization-modulated diode currents for encoding information within high-density memories. We used two in-plane nano-electrodes fabricated on the film surface in gaps of a few tens of nanometers. As an in-plane field is applied antiparallel to the domain orientation above a coercive field, the partial domains near the film surface layer are switched firstly to form conductive charged walls with respect to the underlying unswitched bulk matrix, so that we can observed an "on" current from current-voltage loops. As the switching field is high enough, the underlying domains throughout the whole film thickness are switched. In this case, there was no charged domain wall, and thus, we observed an "off' current. Both "on" and "off' currents with the ratio of 100 are stable over laboratory time with write cycles larger than 2x10(5) and write time as short as 10 ns, which provide the proof of ferro-resistive switching and independent adjustments of ferroelectricity and conductivity in a single-phase ferroelectric in promotion of the integration density of the memory with high performance.

Peripheral Domain Switching and Fatigue-Resistive Readout of Ferroelectric Random Access Memories

Peripheral Ferroelectric Domain Switching and Polarization Fatigue in Nonvolatile Memory Elements of Continuous Pt/SrBi 2 Ta 2 O 9 /pt Thin-Film Capacitors

High-Desity Nonvolatile Ferroelectric Resisitive Memory

Energy-Efficient Ferroelectric Domain Wall Memory with Controlled Domain Switching Dynamics

Temporary Formation of Highly Conducting Domain Walls for Non-Destructive Read-out of Ferroelectric Domain-Wall Resistance Switching Memories.

Developing fatigue-resistant ferroelectrics using interlayer sliding switching

Ferroelectric Resistive Switching in High-Density Nanocapacitor Arrays Based on BiFeO3 Ultrathin Films and Ordered Pt Nanoelectrodes

Quasi-Nondestructive Read Out of Ferroelectric Capacitor Polarization by Exploiting a 2TnC Cell to Relax the Endurance Requirement

Ferroelectric thin films and electrodes for random access memories

In-situ TEM Observation of Multilevel Storage Behavior in Low Power FeRAM Device

Defect-mediated Polarization Switching in Ferroelectric Films for Low-Power-consuming and Ultra-High-density Memories

Next-generation Ferroelectric Domain-Wall Memories: Principle and Architecture

High-Resolution Structural Mapping And Single-Domain Switching Kinetics In 2d-Confined Ferroelectric Nanodots For Low-Power Feram

Compact Modeling and Design Exploration of Non-Destructive Read-Out 1T1C FeRAM

Design Space Exploration of FeRAM Bit Cell for DRAM Application

A Simple Bilayered Magnetoelectric Random Access Memory Cell Based on Electric-Field Controllable Domain Structure

Coexisting Depinning Effect of Domain Walls During the Fatigue in Ferroelectric Thin Films

Polarization fatigue of ferroelectric Pb(Zr_xTi_(1-x_)O_3 thin films revisited

Ferroelectric Polarization and Conductance Filament Coupling for Large Window and High-Reliability Resistive Memory and Energy-Efficient Synaptic Devices

Domain-modified engineering for low-power resistive switching in ferroelectric diodes

Size Effect and Fatigue Mechanism in Ferroelectric Thin Films