Abstract:Controllable synthesis of high-quality hexagonal boron nitride (h-BN) is desired toward the industrial application of 2D devices based on van der Waals heterostructures. Substantial efforts are devoted to synthesize h-BN on copper through chemical vapor deposition, which has been successfully applied to grow graphene. However, the progress in synthesizing h-BN has been significantly retarded, and it is still challenging to realize millimeter-scale domains and control their morphologies reliably. Here, the nucleation density of h-BN on Cu is successfully reduced by over two orders of magnitude by simply introducing a small amount of silicon, giving rise to large triangular domains with maximum 0.25 mm lateral size. Moreover, the domain morphologies can be modified from needles, tree patterns, and leaf darts to triangles through controlling the growth temperature. The presence of silicon alters the growth mechanism from attachment-limited mode to diffusion-limited mode, leading to dendrite domains that are rarely observed on pure Cu. A phase-field model is utilized to reveal the growing dynamics regarding B-N diffusion, desorption, flux, and reactivity variables, and explain the morphology evolution. The work sheds lights on the h-BN growth toward large single crystals and morphology probabilities.

Prediction of Formation of Cubic Boron Nitride Nanowires Inside Silicon Nanotubes

Ultrafast growth of single-crystalline Si nanowires

Prediction of Formation of Cubic Boron Nitride by Construction of Temperature–pressure Phase Diagram at the Nanoscale

Continuum Modeling of Boron Nitride Nanotubes

Deformation and Bifurcation Analysis of Boron-Nitride Nanotubes

A Novel Sulfide-Assisted Growth of Silicon Nano-Wires

Crystalline boron oxide nanowires on silicon substrate

Structural characterizations and electronic properties of boron nitride nanotube crystalline bundles.

Initial stage of growth of single-walled carbon nanotubes : modelling and simulations

Theoretical and experimental study of the mechanism for preparation of SiC nanowires by carbothermal reduction

Controllable Synthesis and Growth Model of Amorphous Silicon Nanotubes with Periodically Dome-Shaped Interiors

Effects of Modeling Method on Prediction of Electronic Properties of Carbon Nantobues and Silicon Nanotubes

Formation, morphology, and effect of complex defects in boron nitride nanotubes: An ab initio calculation

New Insights into the Mechanism for Growing Cubic Boron Nitride Crystals under High Pressure

Theoretical Analysis of the Formation of Face-Centered Cubic Si Nanocrystals by Magnetron Sputtering

Formation and Structure of Boron Nitride Conical Nanotubes

Curvature-induced Condensation of Lithium Confined Inside Single-Walled Carbon Nanotubes: First-principles Calculations

Predicting the Growth of Si3N4 Nanowires by Phase-Equilibrium-dominated Vapor-Liquid-solid Mechanism

Synthesis and Characterization of SiC Nanowires Using Silicon Evaporation

A Vapor-Liquid-Solid Model for Chemical Vapor Deposition Growth of Carbon Nanotubes

Hexagonal Boron Nitride Growth on Cu-Si Alloy: Morphologies and Large Domains.