Low-fired BiNbO4 microwave dielectric ceramics modified by CuV2O6 addition sintered in N2 atmosphere

Chaowei Zhong,Ying Yuan,Shuren Zhang,Yue Pang,Bin Tang

2010-01-01

Ceramics - Silikaty

Abstract:The sintering behavior, microstructure and microwave dielectric properties of BiNbO4 ceramics sintered in N-2 with CuO and V2O5 additions were investigated. The CuO and V2O5 additives, acting as the sintering aids, could effectively lower the sintering temperature of BiNbO4 ceramics. CuV2O6, formed by the reaction between CuO and V2O5 with the mole ratio of 1:1 at 500 degrees C, was more effective to realize low-temperature sintering of BiNbO4 ceramics than the CuO-V2O5 mixture. It was found that the addition of 0.1 wt% CuV2O6 to BiNbO4 lowered the sintering temperature to approx 880 degrees C while maintaining 98.4 % theoretical density. Pure orthorhombic BiNbO4 phase was obtained successfully in the cases of CuO-V2O5 mixture or CuV2O6 additions. The CuO-V2O5 mixture addition would cause inhomogeneous and abnormal grain growth resulting in the degradation of densities and dielectric properties of BiNbO4 ceramics. By contrast, a uniform and dense microstructure was obtained in BiNbO4 ceramics with CuV2O6-addition, contributed to higher dielectric constant and quality factor The BiNbO4 ceramics with 0.5 wt% CuV2O6 addition sintered at 860 degrees C for 2 h have good microwave dielectric properties (at 4.3 GHz): relative dielectric constant (epsilon(r)) = 47, quality factor (Qxf) = 11950 GHz.