Abstract:Nanometallic devices based on amorphous insulator-metal thin films are developed to provide a novel non-volatile resistance-switching random-access memory (RRAM). In these devices, data recording is controlled by a bipolar voltage, which tunes electron localization length, thus resistivity, through electron trapping/detrapping. The low-resistance state is a metallic state while the high-resistance state is an insulating state, as established by conductivity studies from 2K to 300K. The material is exemplified by a Si3N4 thin film with randomly dispersed Pt or Cr. It has been extended to other materials, spanning a large library of oxide and nitride insulator films, dispersed with transition and main-group metal atoms. Nanometallic RRAMs have superior properties that set them apart from other RRAMs. The critical switching voltage is independent of the film thickness/device area/temperature/switching speed. Trapped electrons are relaxed by electron-phonon interaction, adding stability which enables long-term memory retention. As electron-phonon interaction is mechanically altered, trapped electron can be destabilized, and sub-picosecond switching has been demonstrated using an electromagnetically generated stress pulse. AC impedance spectroscopy confirms the resistance state is spatially uniform, providing a capacitance that linearly scales with area and inversely scales with thickness. The spatial uniformity is also manifested in outstanding uniformity of switching properties. Device degradation, due to moisture, electrode oxidation and dielectrophoresis, is minimal when dense thin films are used or when a hermetic seal is provided. The potential for low power operation, multi-bit storage and complementary stacking have been demonstrated in various RRAM configurations.

A Two-Terminal Write-Once-read-many-times-memory Device Based on an Aluminum Nitride Thin Film Containing Al Nanocrystals.

Flexible Write-Once–Read-Many-Times Memory Device Based on a Nickel Oxide Thin Film

In-Plane Ferroelectric Domain Wall Memory with Embedded Electrodes on LiNbO3 Thin Films.

Low-cost Fabrication and Polar-Dependent Switching Uniformity of Memory Devices Using Alumina Interfacial Layer and Ag Nanoparticle Monolayer

Two-terminal write-once-read-many-times memory device based on charging-controlled current modulation in Al/Al-Rich Al2O 3/p-Si diode

Magnetron Sputtered nc-Al/<I>α</I>-Al<SUB>2</SUB>O<SUB>3</SUB> Nanocomposite Thin Films for Nonvolatile Memory Application

Nanoscale Memory Cell Based on a Nanoelectromechanical Switched Capacitor

Magnetron Sputtered Nc-Al/alpha-al2o3 Nanocomposite Thin Films for Nonvolatile Memory Application.

Thickness Effect of Nickel Oxide Thin Films on Associated Solution-Processed Write-Once-read-many-times Memory Devices

Memory Switching and Threshold Switching in a 3D Nanoscaled NbO X System

Titanium–tungsten Nanocrystals Embedded in a SiO2/Al2O3gate Dielectric Stack for Low-Voltage Operation in Non-Volatile Memory

Growth of High-Density Ir Nanocrystals by Atomic Layer Deposition for Nonvolatile Nanocrystal Memory Applications

Discrete Charge Storage Nonvolatile Memory Based on Si Nanocrystals with Nitridation Treatment

Ultrathin Nitride Ferroic Memory with Large ON/OFF Ratios for Analog In‐memory Computing

The Development of Nanometer Solid State Storage Memory

Resistance switching devices based on amorphous insulator-metal thin films

Charging Effect of Aluminum Nitride Thin Films Containing Al Nanocrystals

Highly uniform bipolar resistive switching with Al2}O 3 buffer layer in robust NbAlO-based RRAM

Write-once-read-many-times memory device based on Pt/BiFeO3/LaNiO3 heterostructures

Superior Endurance Performance Of Nonvolatile Memory Devices Based On Discrete Storage In Surface-Nitrided Si Nanocrystals

Cu-Embedded AlN-Based Nonpolar Nonvolatile Resistive Switching Memory