Abstract:A careful investigation is made of the growth of Ir nanocrystals (NCs) on Al2O3 by atomic layer deposition (ALD), and a charge trapping memory device using ALD-grown Ir NCs as the charge trapping layer and ALD-grown Al2O3/HfO2 as the tunneling/blocking layers is fabricated. It is found that the ex situ nucleation of Ir NCs on ALD-grown Al2O3 is difficult, though in situ growth can produce pure metallic Ir NCs with a face-centered cubic crystalline phase directly on ALD-grown Al2O3 at the initial growth stage, which follows the nucleation incubation model. The growth of these metallic Ir NCs is attributed to the presence of a uniform coverage of reactive groups (hydroxyl or dimethylaluminum) on the as-deposited fresh ALD-grown Al2O3 surface, which greatly promotes the uniform nucleation of Ir. Electrical measurements of p-Si/Al2O3/Ir NCs/HfO2 memory cells exhibit a large memory window of 4.2 V at the sweeping gate voltage of ±10 V, and a ∼76% retention property after 104 s at 75 °C. Also, a stable memory window of ∼2 V is achieved during the first 105 program/erase cycles under a ±10 V/10 ms program/erase operation. In situ ALD-grown Ir NCs with the highest density of 0.6 × 1012/cm2 provide a potential approach to fabricate large-area high-density NCs for future ultrahigh-density nonvolatile NC memory applications.

Magnetron Sputtered Nc-Al/alpha-al2o3 Nanocomposite Thin Films for Nonvolatile Memory Application.

Magnetron Sputtered nc-Al/<I>α</I>-Al<SUB>2</SUB>O<SUB>3</SUB> Nanocomposite Thin Films for Nonvolatile Memory Application

Oxygen partial pressure dependence of memory effect of sputtered nc-Al/α-Al2O3 thin films

Charging effect of Al2O3 thin films containing Al nanocrystals

A Two-Terminal Write-Once-read-many-times-memory Device Based on an Aluminum Nitride Thin Film Containing Al Nanocrystals.

Al 2 O 3 –cu 2 O Composite Charge-Trapping Nonvolatile Memory

Electronic Structure and Charge-Trapping Characteristics of the Al2O3-TiAlO-SiO2 Gate Stack for Nonvolatile Memory Applications

A TiAl2O5 Nanocrystal Charge Trap Memory Device

Performance and Retention Characteristics of Nanocrystalline Si Floating Gate Memory with an Al2O3 Tunnel Layer Fabricated by Plasma-Enhanced Atomic Layer Deposition

Flexible nanocomposite films of CoFe<sub>2</sub>O<sub>4</sub>/(0.65Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O <sub>3</sub>-0.35PbTiO<sub>3</sub>)/PMMA for non-volatile memory applications

Enhanced Resistive Switching Characteristics in Al2O3 Memory Devices by Embedded Ag Nanoparticles.

Enhancement of the Charge Trapping Performances with HfAlO Composite Oxide Thin Films in SONOS-type Nonvolatile Memory

A Hybrid Method for Fabrication of Au Nanocrystals Nonvolatile Memory

Monolayer FePt Nanocrystal Self-Assembly Embedded into Atomic-Layer-deposited Al2O3 Films for Nonvolatile Memory Applications

Titanium–tungsten Nanocrystals Embedded in a SiO2/Al2O3gate Dielectric Stack for Low-Voltage Operation in Non-Volatile Memory

Formation of NiSi2/SiN compound nanocrystal for nonvolatile memory application

Formation of NiSi2/SiNX compound nanocrystal for nonvolatile memory application

Ti–Al–O Nanocrystal Charge Trapping Memory Cells Fabricated by Atomic Layer Deposition

Atomic Layer Deposition of High-Density Pt Nanodots on Al2O3 Film Using (mecp)pt(me)3 and O2 Precursors for Nonvolatile Memory Applications.

Preparation of NiFe Binary Alloy Nanocrystals for Nonvolatile Memory Applications

Growth of High-Density Ir Nanocrystals by Atomic Layer Deposition for Nonvolatile Nanocrystal Memory Applications